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Assignee profile:

MICROSEMI CORPORATION

City:

Bend, Oregon

Country:

United States

Published Applications:

23

Last publication date:

2017-04-04

Patent Grants:

20

Last grant date:

2017-04-04

Top Inventors for applications by MICROSEMI CORPORATION

These are the the leading inventors for applications assigned to MICROSEMI CORPORATION:

Recent patent applications by MICROSEMI CORPORATION

MICROSEMI CORPORATION based in Bend, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2017-04-04 ✅ Patent 9,613,918 granted on 2017-04-04
US14153948
Electricity

RF power multi-chip module package

 #2 | 2016-05-05 ✅ Patent 9,478,606 granted on 2016-10-25
US20160126306A1
Electricity

SiC transient voltage suppressor

 #3 | 2014-03-06 ✅ Patent 9,040,377 granted on 2015-05-26
US20140065778A1
Electricity

Low loss SiC MOSFET

 #4 | 2013-11-28
US20130313570A1
Electricity

MONOLITHICALLY INTEGRATED SIC MOSFET AND SCHOTTKY BARRIER DIODE

 #5 | 2013-10-03 ✅ Patent 8,674,439 granted on 2014-03-18
US20130256698A1
Electricity

Low loss SiC MOSFET

 #6 | 2013-08-27 ✅ Patent 8,519,410 granted on 2013-08-27
US13324601
-

Silicon carbide vertical-sidewall dual-mesa static induction transistor

 #7 | 2013-07-18 ✅ Patent 8,841,718 granted on 2014-09-23
US20130181280A1
Electricity

Pseudo self aligned radhard MOSFET and process of manufacture

 #8 | 2013-07-02 ✅ Patent 8,476,691 granted on 2013-07-02
US13030907
-

High reliability-high voltage junction termination with charge dissipation layer

 #9 | 2013-05-07 ✅ Patent 8,436,367 granted on 2013-05-07
US13231877
-

SiC power vertical DMOS with increased safe operating area

 #10 | 2011-05-19 ✅ Patent 8,034,666 granted on 2011-10-11
US20110117705A1
Electricity

Multi-layer thick-film RF package

 #11 | 2011-05-19 ✅ Patent 8,410,601 granted on 2013-04-02
US20110116237A1
Electricity

RF package

 #12 | 2011-03-03
US20110049532A1
Electricity

SILICON CARBIDE DUAL-MESA STATIC INDUCTION TRANSISTOR

 #13 | 2011-02-17
US20110037139A1
Electricity

SCHOTTKY BARRIER DIODE (SBD) AND ITS OFF-SHOOT MERGED PN/SCHOTTKY DIODE OR JUNCTION BARRIER SCHOTTKY (JBS) DIODE

 #14 | 2010-12-14 ✅ Patent 7,851,881 granted on 2010-12-14
US12365083
-

Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode

 #15 | 2009-10-22 ✅ Patent 7,956,455 granted on 2011-06-07
US20090261471A1
Electricity

RF power transistor package

 #16 | 2009-03-19 ✅ Patent 8,110,888 granted on 2012-02-07
US20090072340A1
Electricity

Edge termination for high voltage semiconductor device

 #17 | 2007-05-03 ✅ Patent 7,569,927 granted on 2009-08-04
US20070096297A1
Electricity

RF power transistor package

 #18 | 2007-05-03 ✅ Patent 7,671,410 granted on 2010-03-02
US20070096237A1
Electricity

Design and fabrication of rugged FRED, power MOSFET or IGBT

 #19 | 2007-04-05 ✅ Patent 7,579,252 granted on 2009-08-25
US20070075334A1
Electricity

Self aligned process for BJT fabrication

 #20 | 2006-06-08 ✅ Patent 7,498,651 granted on 2009-03-03
US20060118900A1
Electricity

Junction termination structures for wide-bandgap power devices

 #21 | 2005-12-29 ✅ Patent 7,352,045 granted on 2008-04-01
US20050285117A1
Electricity

Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates

 #22 | 2005-11-24 ✅ Patent 7,508,000 granted on 2009-03-24
US20050260821A1
Electricity

Method of fabricating self-aligned silicon carbide semiconductor devices

 #23 | 2005-10-06 ✅ Patent 7,342,262 granted on 2008-03-11
US20050218500A1
Electricity

Split-gate power module for suppressing oscillation therein

Also check out Microsemi Corporation's (Bend, United States) applicant profile with 5 patent applications submitted.

AssigneeID:

30470 ⎘