Inventor profile of:

Robert D. CLARK

City:

Schenectady, New York

Country:

United States

Published Applications:

18

Last publication date:

2011-09-15

Top Assignees for applications by Robert D. CLARK

The entities that hold a legal rights for patent applications filed by inventor CLARK Robert D.:

Recent patent applications by CLARK Robert D.

Robert D. CLARK from Schenectady, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2011-09-15
US20110220148A1
Chemistry; metallurgy

Method for performing preventative maintenance in a substrate processing system

#2 | 2010-10-14
US20100261342A1
Electricity

Semiconductor device containing a buried threshold voltage adjustment layer and method of forming

#3 | 2010-09-30
US20100248464A1
Electricity

Method for forming a high-K gate stack with reduced effective oxide thickness

#4 | 2010-03-11
US20100062592A1
Electricity

METHOD FOR FORMING GATE SPACERS FOR SEMICONDUCTOR DEVICES

#5 | 2010-02-11
US20100035423A1
Electricity

Method of controlling interface layer thickness in high dielectric constant film structures including growing and annealing a chemical oxide layer

#6 | 2009-10-01
US20090246974A1
Electricity

Method of forming a stressed passivation film using a microwave-assisted oxidation process

#7 | 2009-10-01
US20090246973A1
Electricity

Method of forming a stressed passivation film using a non-ionizing electromagnetic radiation-assisted oxidation process

#8 | 2009-06-25
US20090163012A1
Electricity

Method of forming high-dielectric constant films for semiconductor devices

#9 | 2009-04-02
US20090085175A1
Electricity

Semiconductor device containing a buried threshold voltage adjustment layer and method of forming

#10 | 2009-02-19
US20090047798A1
Electricity

Method of forming high dielectric constant films using a plurality of oxidation sources

#11 | 2008-10-02
US20080242116A1
Electricity

Method for forming strained silicon nitride films and a device containing such films

#12 | 2008-10-02
US20080242077A1
Chemistry; metallurgy

Strained metal silicon nitride films and method of forming

#13 | 2008-10-02
US20080241555A1
Chemistry; metallurgy

Strained metal nitride films and method of forming

#14 | 2008-10-02
US20080241388A1
Chemistry; metallurgy

Strained metal silicon nitride films and method of forming

#15 | 2008-10-02
US20080241382A1
Chemistry; metallurgy

Strained metal nitride films and method of forming

#16 | 2008-09-25
US20080233288A1
Chemistry; metallurgy

Method of forming crystallographically stabilized doped hafnium zirconium based films

#17 | 2008-09-25
US20080230854A1
Electricity

Semiconductor device containing crystallographically stabilized doped hafnium zirconium based materials

#18 | 2008-04-03
US20080081470A1
Electricity

Method for forming strained silicon nitride films and a device containing such films

InventorID:

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