Sunnyvale, California
United States
56
2011-03-24
The entities that hold a legal rights for patent applications filed by inventor Chen Ling:
Ling Chen from Sunnyvale, US has applied for patents for these inventions. The list has both pending applications and granted patents:
SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINING PRECURSOR AND A NITROGEN-CONTAINING PRECURSOR
#2 | 2010-09-30Gas delivery apparatus and method for atomic layer deposition
#3 | 2010-08-24Gas delivery apparatus for atomic layer deposition
#4 | 2009-12-17Apparatus and method for hybrid chemical processing
#5 | 2009-08-06Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
#6 | 2009-06-18Method and apparatus for generating a precursor for a semiconductor processing system
#7 | 2009-01-08Method and apparatus for providing precursor gas to a processing chamber
#8 | 2008-11-06Apparatus for hybrid chemical processing
#9 | 2008-11-06Noble metal layer formation for copper film deposition
#10 | 2008-09-11Chemical precursor ampoule for vapor deposition processes
#11 | 2008-02-21RATE CONTROL PROCESS FOR A PRECURSOR DELIVERY SYSTEM
#12 | 2008-02-21Gas delivery apparatus for atomic layer deposition
#13 | 2008-02-14ATOMIC LAYER DEPOSITION PROCESS
#14 | 2008-01-10Deposition processes for tungsten-containing barrier layers
#15 | 2007-12-13Apparatus for integration of barrier layer and seed layer
#16 | 2007-12-06Multi-component doping of copper seed layer
#17 | 2007-08-28Enhancement of copper line reliability using thin ALD tan film to cap the copper line
#18 | 2007-07-17Integration of ALD/CVD barriers with porous low k materials
#19 | 2007-07-05RELIABILITY BARRIER INTEGRATION FOR CU APPLICATION
#20 | 2007-07-05Apparatus and method for hybrid chemical processing
#21 | 2007-05-17Method and apparatus for providing precursor gas to a processing chamber
#22 | 2007-05-03INTEGRATION PROCESS OF TUNGSTEN ATOMIC LAYER DEPOSITION FOR METALLIZATION APPLICATION
#23 | 2007-04-26Method for providing gas to a processing chamber
#24 | 2007-04-17Apparatus and method for hybrid chemical processing
#25 | 2007-03-22Method and apparatus for generating a precursor for a semiconductor processing system
#26 | 2007-03-06Apparatus for providing gas to a processing chamber
#27 | 2007-03-01Processing chamber configured for uniform gas flow
#28 | 2007-02-01Enhanced copper growth with ultrathin barrier layer for high performance interconnects
#29 | 2007-01-04Enhanced copper growth with ultrathin barrier layer for high performance interconnects
#30 | 2006-11-16Apparatus and method for generating a chemical precursor
#31 | 2006-09-28Cyclical deposition of refractory metal silicon nitride
#32 | 2006-09-28Valve design and configuration for fast delivery system
#33 | 2006-09-28Valve design and configuration for fast delivery system
#34 | 2006-07-25Cyclical deposition of refractory metal silicon nitride
#35 | 2006-06-27Valve design and configuration for fast delivery system
#36 | 2006-04-11Reliability barrier integration for Cu application
#37 | 2006-03-16Methods and apparatus for forming barrier layers in high aspect ratio vias
#38 | 2006-01-26Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
#39 | 2005-12-13Methods and apparatus for forming barrier layers in high aspect ratio vias
#40 | 2005-12-06Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
#41 | 2005-12-01Methods and apparatus for forming barrier layers in high aspect ratio vias
#42 | 2005-11-17Multi-step barrier deposition method
#43 | 2005-10-25CVD TiSiN barrier for copper integration
#44 | 2005-10-18Method and apparatus for gas temperature control in a semiconductor processing system
#45 | 2005-10-06Noble metal layer formation for copper film deposition
#46 | 2005-09-06Selective deposition of a barrier layer on a dielectric material
#47 | 2005-09-01Method and apparatus of generating PDMAT precursor
#48 | 2005-08-30Integration of barrier layer and seed layer
#49 | 2005-08-11Gas delivery apparatus for atomic layer deposition
#50 | 2005-07-12Gas delivery apparatus and method for atomic layer deposition
#51 | 2005-06-30Integration of barrier layer and seed layer
#52 | 2005-06-14Method and apparatus of generating PDMAT precursor
#53 | 2005-05-05Precursor delivery system with rate control
#54 | 2005-04-07Tantalum barrier layer for copper metallization
#55 | 2005-03-29Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber
#56 | 2005-01-04Method of film deposition using activated precursor gases
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