Inventor profile of:

Shaoping Tang

City:

Plano, Texas

Country:

United States

Published Applications:

12

Last publication date:

2011-04-14

Top Assignees for applications by Shaoping Tang

The entities that hold a legal rights for patent applications filed by inventor Tang Shaoping:

Recent patent applications by Tang Shaoping

Shaoping Tang from Plano, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2011-04-14
US20110084323A1
Electricity

Transistor performance modification with stressor structures

#2 | 2009-07-16
US20090179280A1
Electricity

High threshold NMOS source-drain formation with As, P and C to reduce damage

#3 | 2009-01-01
US20090004803A1
Physics

Multi-stage implant to improve device characteristics

#4 | 2007-12-13
US20070287239A1
Electricity

Intentional pocket shadowing to compensate for the effects of cross-diffusion in SRAMs

#5 | 2007-08-02
US20070176263A1
Electricity

Method of preparing a semiconductor substrate utilizing plural implants under an isolation region to isolate adjacent wells

#6 | 2006-02-02
US20060024910A1
Electricity

Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI)

#7 | 2005-08-23
US10299525
-

Methods for improving well to well isolation

#8 | 2005-07-28
US20050164431A1
Electricity

Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance

#9 | 2005-07-07
US20050149887A1
Physics

Design method and system for optimum performance in integrated circuits that use power management

#10 | 2005-06-02
US20050118770A1
Electricity

Method for introducing hydrogen into a channel region of a metal oxide semiconductor (MOS) device

#11 | 2005-03-17
US20050059228A1
Electricity

Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance

#12 | 2005-02-15
US10697510
-

Process to reduce gate edge drain leakage in semiconductor devices

InventorID:

3532735 ⎘