Inventor profile of:

Matty Caymax

City:

Leuven

Country:

Belgium

Published Applications:

23

Last publication date:

2017-08-31

Top Assignees for applications by Matty Caymax

The entities that hold a legal rights for patent applications filed by inventor Caymax Matty:

Recent patent applications by Caymax Matty

Matty Caymax from Leuven, BE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-08-31
US20170250075A1
Electricity

Method of producing transition metal dichalcogenide layer

#2 | 2015-11-26
US20150340503A1
Electricity

Method of producing a III-V fin structure

#3 | 2014-09-11
US20140252414A1
Electricity

Passivated III-V or Ge fin-shaped field effect transistor

#4 | 2014-08-28
US20140239461A1
Electricity

Oxygen monolayer on a semiconductor

#5 | 2014-01-23
US20140020619A1
Electricity

Method for Growing a Monocrystalline Tin-Containing Semiconductor Material

#6 | 2014-01-09
US20140008727A1
Electricity

Method for doping semiconductor structures and the semiconductor device thereof

#7 | 2013-01-03
US20130001507A1
Electricity

Semiconductor device and method

#8 | 2012-11-08
US20120280326A1
Electricity

Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby

#9 | 2012-07-19
US20120184088A1
Electricity

Method for selective deposition of a semiconductor material

#10 | 2012-07-12
US20120175741A1
Chemistry; metallurgy

Method for direct deposition of a germanium layer

#11 | 2012-05-10
US20120112262A1
Electricity

Method for producing a floating gate memory structure

#12 | 2012-02-09
US20120032234A1
Electricity

Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof

#13 | 2011-07-14
US20110169049A1
Electricity

Method for doping semiconductor structures and the semiconductor device thereof

#14 | 2010-12-30
US20100327316A1
Electricity

Method for manufacturing an III-V engineered substrate and the III-V engineered substrate thereof

#15 | 2010-07-01
US20100167446A1
Electricity

Method for manufacturing a junction

#16 | 2008-06-26
US20080153266A1
Electricity

METHOD TO IMPROVE THE SELECTIVE EPITAXIAL GROWTH (SEG) PROCESS

#17 | 2007-03-01
US20070049045A1
Electricity

Atomic layer deposition method for depositing a layer

#18 | 2007-02-13
US10263623
-

Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof

#19 | 2006-12-28
US20060289764A1
Performing operations; transporting

Infrared radiation detector

#20 | 2006-12-21
US20060286810A1
Electricity

Atomic layer deposition (ALD) method and reactor for producing a high quality layer

#21 | 2006-04-27
US20060086950A1
Electricity

Method for making a passivated semiconductor substrate

#22 | 2005-04-26
US9861334
-

Method of fabrication of an infrared radiation detector and infrared detector device

#23 | 2005-01-20
US20050012040A1
Performing operations; transporting

Method of fabrication of an infrared radiation detector and infrared detector device

InventorID:

3577 ⎘