Inventor profile of:

Shulin Wang

City:

Campbell, California

Country:

United States

Published Applications:

16

Last publication date:

2011-07-05

Top Assignees for applications by Shulin Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Shulin:

Recent patent applications by Wang Shulin

Shulin Wang from Campbell, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2011-07-05
US10741417
-

Method and apparatus for forming a high quality low temperature silicon nitride layer

#2 | 2010-06-17
US20100151680A1
Electricity

Substrate carrier with enhanced temperature uniformity

#3 | 2010-02-04
US20100029094A1
Electricity

Method and Apparatus for Forming a High Quality Low Temperature Silicon Nitride Layer

#4 | 2008-12-11
US20080305629A1
Chemistry; metallurgy

Tungsten nitride atomic layer deposition processes

#5 | 2008-04-24
US20080092815A1
Chemistry; metallurgy

Gas distribution assembly for use in a semiconductor work piece processing reactor

#6 | 2007-12-13
US20070287271A1
Chemistry; metallurgy

Deposition of nano-crystal silicon using a single wafer chamber

#7 | 2007-07-19
US20070166459A1
Chemistry; metallurgy

Assembly and method for delivering a reactant material onto a substrate

#8 | 2007-01-25
US20070020924A1
Chemistry; metallurgy

Tungsten nitride atomic layer deposition processes

#9 | 2006-12-21
US20060286763A1
Electricity

Gate electrode dopant activation method for semiconductor manufacturing

#10 | 2006-02-02
US20060024959A1
Electricity

Thin tungsten silicide layer deposition and gate metal integration

#11 | 2006-02-02
US20060024926A1
Chemistry; metallurgy

Method of forming a controlled and uniform lightly phosphorous doped silicon film

#12 | 2006-01-26
US20060019469A1
Chemistry; metallurgy

Deposition of nano-crystal silicon using a single wafer chamber

#13 | 2006-01-03
US10263105
-

Method of forming a controlled and uniform lightly phosphorous doped silicon film

#14 | 2005-11-17
US20050255714A1
Electricity

Method for silicon nitride chemical vapor deposition

#15 | 2005-08-25
US20050186765A1
Electricity

Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal

#16 | 2005-08-11
US20050176240A1
Chemistry; metallurgy

Cyclical deposition of tungsten nitride for metal oxide gate electrode

InventorID:

3580839 ⎘