Inventor profile of:

John A. Pipitone

City:

Livermore, California

Country:

United States

Published Applications:

13

Last publication date:

2013-08-01

Top Assignees for applications by John A. Pipitone

The entities that hold a legal rights for patent applications filed by inventor Pipitone John A.:

Recent patent applications by Pipitone John A.

John A. Pipitone from Livermore, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-08-01
US20130192629A1
Performing operations; transporting

SUBSTRATE CLEANING CHAMBER AND CLEANING AND CONDITIONING METHODS

#2 | 2012-04-26
US20120097524A1
Chemistry; metallurgy

RF impedance matching network with secondary frequency and sub-harmonic variant

#3 | 2012-04-26
US20120097104A1
Electricity

RF IMPEDANCE MATCHING NETWORK WITH SECONDARY DC INPUT

#4 | 2010-12-16
US20100314245A1
Chemistry; metallurgy

Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition

#5 | 2010-12-16
US20100314244A1
Chemistry; metallurgy

Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition

#6 | 2010-04-15
US20100089748A1
Chemistry; metallurgy

CONTROL OF EROSION PROFILE ON A DIELECTRIC RF SPUTTER TARGET

#7 | 2010-01-21
US20100012480A1
Electricity

Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning

#8 | 2010-01-21
US20100012029A1
Electricity

Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning

#9 | 2009-08-06
US20090197419A1
Electricity

Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture

#10 | 2008-11-13
US20080276958A1
Performing operations; transporting

Substrate cleaning chamber and cleaning and conditioning methods

#11 | 2008-01-17
US20080014747A1
Electricity

Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture

#12 | 2007-08-23
US20070193982A1
Electricity

Physical vapor deposition plasma reactor with arcing suppression

#13 | 2007-01-11
US20070006972A1
Electricity

Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products

InventorID:

359780 ⎘