Richardson, Texas
United States
18
2010-05-06
The entities that hold a legal rights for patent applications filed by inventor VISOKAY Mark:
Mark VISOKAY from Richardson, US has applied for patents for these inventions. The list has both pending applications and granted patents:
MOS device and process having low resistance silicide interface using additional source/drain implant
#2 | 2009-03-05MOS device and process having low resistance silicide interface using additional source/drain implant
#3 | 2008-11-27USE OF LOW TEMPERATURE ANNEAL TO PROVIDE LOW DEFECT GATE FULL SILICIDATION
#4 | 2008-11-27USE OF ALLOYS TO PROVIDE LOW DEFECT GATE FULL SILICIDATION
#5 | 2008-11-27Use of dopants to provide low defect gate full silicidation
#6 | 2007-08-07Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers
#7 | 2007-08-07Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
#8 | 2007-03-15Methods for fabricating MOS transistor gates with doped silicide
#9 | 2006-11-02MOS Transistor Gates with Doped Silicide and Methods for Making the Same
#10 | 2006-07-13Capacitor with high dielectric constant materials and method of making
#11 | 2006-07-04Control of high-k gate dielectric film composition profile for property optimization
#12 | 2006-05-02Integrated circuits with rhodium-rich structures
#13 | 2006-05-02Capacitor with high dielectric constant materials and method of making
#14 | 2006-04-13Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
#15 | 2005-04-14Reduction of dopant loss in a gate structure
#16 | 2005-03-31MOS transistor gates with doped silicide and methods for making the same
#17 | 2005-03-22Integrated capacitors fabricated with conductive metal oxides
#18 | 2005-03-17Metal gate MOS transistors and methods for making the same
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