Inventor profile of:

Frank Koschinsky

City:

Radebeul

Country:

Germany

Published Applications:

20

Last publication date:

2017-04-27

Top Assignees for applications by Frank Koschinsky

The entities that hold a legal rights for patent applications filed by inventor Koschinsky Frank:

Recent patent applications by Koschinsky Frank

Frank Koschinsky from Radebeul, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-04-27
US20170117179A1
Electricity

Method including a formation of a diffusion barrier and semiconductor structure including a diffusion barrier

#2 | 2015-11-12
US20150325467A1
Electricity

Methods for fabricating integrated circuits including barrier layers for interconnect structures

#3 | 2015-04-23
US20150111316A1
Electricity

Method for detecting defects in a diffusion barrier layer

#4 | 2014-11-27
US20140349478A1
Electricity

Method including an etching of a portion of an interlayer dielectric in a semiconductor structure, a degas process and a preclean process

#5 | 2014-09-18
US20140273436A1
Electricity

METHODS OF FORMING BARRIER LAYERS FOR CONDUCTIVE COPPER STRUCTURES

#6 | 2014-01-23
US20140024213A1
Electricity

PROCESSES FOR FORMING INTEGRATED CIRCUITS WITH POST-PATTERNING TREAMENT

#7 | 2013-08-08
US20130203266A1
Electricity

Methods of forming metal nitride materials

#8 | 2012-06-28
US20120160415A1
Electricity

Multi-step deposition control

#9 | 2010-09-30
US20100244028A1
Electricity

Test system and method of reducing damage in seed layers in metallization systems of semiconductor devices

#10 | 2010-05-06
US20100109131A1
Electricity

Reduced wafer warpage in semiconductors by stress engineering in the metallization system

#11 | 2009-12-31
US20090325378A1
Electricity

Reducing contamination of semiconductor substrates during BEOL processing by performing a deposition/etch cycle during barrier deposition

#12 | 2008-12-04
US20080299681A1
Electricity

Multi-step deposition control

#13 | 2008-07-03
US20080160654A1
Electricity

Method of testing an integrity of a material layer in a semiconductor structure

#14 | 2007-05-31
US20070123034A1
Electricity

Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer

#15 | 2007-05-03
US20070096221A1
Electricity

SEMICONDUCTOR DEVICE COMPRISING COPPER-BASED CONTACT PLUG AND A METHOD OF FORMING THE SAME

#16 | 2007-04-05
US20070077761A1
Electricity

TECHNIQUE FOR FORMING A COPPER-BASED METALLIZATION LAYER INCLUDING A CONDUCTIVE CAPPING LAYER

#17 | 2006-11-30
US20060267207A1
Electricity

Method of forming electrically conductive lines in an integrated circuit

#18 | 2006-11-30
US20060267201A1
Electricity

Technique for forming copper-containing lines embedded in a low-k dielectric by providing a stiffening layer

#19 | 2005-11-15
US10259037
-

Void formation monitoring in a damascene process

#20 | 2005-10-20
US20050230344A1
Electricity

Method for cleaning the surface of a substrate

InventorID:

377733 ⎘