Inventor profile of:

Nobuo MATSUKI

City:

Tokyo

Country:

Japan

Published Applications:

20

Last publication date:

2009-06-18

Top Assignees for applications by Nobuo MATSUKI

The entities that hold a legal rights for patent applications filed by inventor MATSUKI Nobuo:

Recent patent applications by MATSUKI Nobuo

Nobuo MATSUKI from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2009-06-18
US20090156017A1
Chemistry; metallurgy

Method for forming dielectric film using siloxane-silazane mixture

#2 | 2009-03-12
US20090068852A1
Electricity

Method of forming a carbon polymer film using plasma CVD

#3 | 2008-12-11
US20080305648A1
Electricity

Method for forming inorganic silazane-based dielectric film

#4 | 2008-12-04
US20080299326A1
Chemistry; metallurgy

PLASMA CVD APPARATUS HAVING NON-METAL SUSCEPTOR

#5 | 2008-03-27
US20080076266A1
Electricity

Method for forming insulation film having high density

#6 | 2008-02-14
US20080038485A1
Chemistry; metallurgy

Method for forming silicon carbide film containing oxygen

#7 | 2007-09-27
US20070224833A1
Electricity

Method of forming carbon polymer film using plasma CVD

#8 | 2007-09-20
US20070218705A1
Electricity

Method of forming a carbon polymer film using plasma CVD

#9 | 2007-05-17
US20070111540A1
Electricity

Method of forming silicon-containing insulation film having low dielectric constant and low film stress

#10 | 2007-03-22
US20070066086A1
Electricity

METHOD OF FORMING SILICON-CONTAINING INSULATION FILM HAVING LOW DIELECTRIC CONSTANT AND LOW FILM STRESS

#11 | 2007-03-22
US20070065597A1
Chemistry; metallurgy

Plasma CVD film formation apparatus provided with mask

#12 | 2007-01-11
US20070009673A1
Chemistry; metallurgy

Insulation film and method for manufacturing same

#13 | 2007-01-04
US20070004204A1
Electricity

Method for forming insulation film

#14 | 2006-11-30
US20060269690A1
Chemistry; metallurgy

Formation technology for nanoparticle films having low dielectric constant

#15 | 2006-11-16
US20060258176A1
Chemistry; metallurgy

Method for forming insulation film

#16 | 2006-09-28
US20060216433A1
Electricity

Method of stabilizing film quality of low-dielectric constant film

#17 | 2006-05-18
US20060105583A1
Chemistry; metallurgy

Formation technology of nano-particle films having low dielectric constant

#18 | 2006-04-20
US20060084280A1
Electricity

Method of forming a carbon polymer film using plasma CVD

#19 | 2005-02-24
US20050042884A1
Electricity

Method of forming silicon-containing insulation film having low dielectric constant and low film stress

#20 | 2005-02-17
US20050034667A1
Chemistry; metallurgy

Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation

InventorID:

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