Tokyo
Japan
20
2009-06-18
The entities that hold a legal rights for patent applications filed by inventor MATSUKI Nobuo:
Nobuo MATSUKI from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Method for forming dielectric film using siloxane-silazane mixture
#2 | 2009-03-12Method of forming a carbon polymer film using plasma CVD
#3 | 2008-12-11Method for forming inorganic silazane-based dielectric film
#4 | 2008-12-04PLASMA CVD APPARATUS HAVING NON-METAL SUSCEPTOR
#5 | 2008-03-27Method for forming insulation film having high density
#6 | 2008-02-14Method for forming silicon carbide film containing oxygen
#7 | 2007-09-27Method of forming carbon polymer film using plasma CVD
#8 | 2007-09-20Method of forming a carbon polymer film using plasma CVD
#9 | 2007-05-17Method of forming silicon-containing insulation film having low dielectric constant and low film stress
#10 | 2007-03-22METHOD OF FORMING SILICON-CONTAINING INSULATION FILM HAVING LOW DIELECTRIC CONSTANT AND LOW FILM STRESS
#11 | 2007-03-22Plasma CVD film formation apparatus provided with mask
#12 | 2007-01-11Insulation film and method for manufacturing same
#13 | 2007-01-04Method for forming insulation film
#14 | 2006-11-30Formation technology for nanoparticle films having low dielectric constant
#15 | 2006-11-16Method for forming insulation film
#16 | 2006-09-28Method of stabilizing film quality of low-dielectric constant film
#17 | 2006-05-18Formation technology of nano-particle films having low dielectric constant
#18 | 2006-04-20Method of forming a carbon polymer film using plasma CVD
#19 | 2005-02-24Method of forming silicon-containing insulation film having low dielectric constant and low film stress
#20 | 2005-02-17Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation
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