Inventor profile of:

Ja-hum Ku

City:

Gyeonggi-do

Country:

South Korea

Published Applications:

12

Last publication date:

2009-08-06

Top Assignees for applications by Ja-hum Ku

The entities that hold a legal rights for patent applications filed by inventor Ku Ja-hum:

Recent patent applications by Ku Ja-hum

Ja-hum Ku from Gyeonggi-do, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2009-08-06
US20090194817A1
Electricity

CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein

#2 | 2009-05-14
US20090124093A1
Electricity

Methods of forming CMOS integrated circuits that utilize insulating layers with high stress characteristics to improve NMOS and PMOS transistor carrier mobilities

#3 | 2009-01-15
US20090017625A1
Electricity

Methods for removing gate sidewall spacers in CMOS semiconductor fabrication processes

#4 | 2008-10-02
US20080242015A1
Electricity

Methods of forming CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein and circuits formed thereby

#5 | 2008-05-29
US20080124859A1
Electricity

Methods of Forming CMOS Integrated Circuits Using Gate Sidewall Spacer Reduction Techniques

#6 | 2008-05-22
US20080116521A1
Electricity

CMOS Integrated Circuits that Utilize Insulating Layers with High Stress Characteristics to Improve NMOS and PMOS Transistor Carrier Mobilities and Methods of Forming Same

#7 | 2008-02-07
US20080029823A1
Electricity

Semiconductor Device Having a Dual Stress Liner and Light Exposure Apparatus for Forming the Dual Stress Liner

#8 | 2007-08-09
US20070184649A1
Electricity

Methods of forming dual-damascene interconnect structures on semiconductor substrates using multiple planarization layers having different porosity characteristics

#9 | 2007-04-12
US20070082439A1
Electricity

Methods of fabricating semiconductor devices having a dual stress liner

#10 | 2006-07-27
US20060163677A1
Electricity

Methods of forming a semiconductor device having a metal gate electrode and associated devices

#11 | 2005-03-08
US10373005
-

Methods of fabricating integrated circuit gates by pretreating prior to oxidizing

#12 | 2005-01-27
US20050020042A1
Electricity

Methods of forming a semiconductor device having a metal gate electrode and associated devices

InventorID:

3945317 ⎘