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Inventor profile of:

Dawei Sun

City:

Nashua, New Hampshire

Country:

United States

Published Applications:

Last publication date:

2022-06-16

Top Assignees for applications by Dawei Sun

The entities that hold a legal rights for patent applications filed by inventor Sun Dawei:

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 7 Gloucester, MA United States
Applied Materials, Inc. 5 Santa Clara, CA United States
Leading Edge Crystal Technologies, Inc. 1 Gloucester, MA United States

Recent patent applications by Sun Dawei

Dawei Sun from Nashua, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2022-06-16

US20220189784A1

Electricity

DEFLECTABLE PLATENS AND ASSOCIATED METHODS

#2 | 2021-05-06

US20210134650A1

Electricity

Deflectable platen and associated method

#3 | 2021-04-22

US20210118692A1

Electricity

Deflectable platens and associated methods

#4 | 2020-12-03

US20200381271A1

Electricity

SYSTEM AND APPARATUS FOR ENHANCED SUBSTRATE HEATING AND RAPID SUBSTRATE COOLING

#5 | 2020-12-03

US20200378837A1

Physics

Enhanced substrate temperature measurement apparatus, system and method

#6 | 2018-07-19

US20180202066A1

Chemistry; metallurgy

Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt

#7 | 2018-02-15

US20180047864A1

Electricity

System and method for crystalline sheet growth using a cold block and gas jet

#8 | 2015-02-12

US20150040818A1

Chemistry; metallurgy

METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT

#9 | 2014-07-31

US20140209016A1

Chemistry; metallurgy

Sheet production apparatus for removing a crystalline sheet from the surface of a melt using gas jets located above and below the crystalline sheet

#10 | 2013-08-22

US20130213296A1

Chemistry; metallurgy

METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT

#11 | 2013-08-22

US20130213295A1

Chemistry; metallurgy

Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt

#12 | 2011-11-10

US20110272115A1

Chemistry; metallurgy

Removing a sheet from the surface of a melt using elasticity and buoyancy

#13 | 2011-11-10

US20110271899A1

Chemistry; metallurgy

Removing a sheet from the surface of a melt using gas jets

InventorID:

395844 ⎘