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Inventor profile of:

Naoki TAMAOKI

City:

Tokyo

Country:

Japan

Published Applications:

Last publication date:

2017-09-14

Top Assignees for applications by Naoki TAMAOKI

The entities that hold a legal rights for patent applications filed by inventor TAMAOKI Naoki:

Kabushiki Kaisha Toshiba 7 Tokyo, Japan
TOKYO ELECTRON LIMITED 1 Tokyo, Japan
L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude 1 Paris, France
Toshiba Memory Corporation 1 Tokyo, Japan
L'Air Liquide, Société Anonyme á Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procédés Georges Claude 1 Paris, France
L'Air Liquide 1 Paris, France
Kabushiki Kaisha Toshiba 1 Minato-ku, Japan

Recent patent applications by TAMAOKI Naoki

Naoki TAMAOKI from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-09-14

US20170262556A1

Physics

Topography simulation apparatus, topography simulation method, and topography simulation program

#2 | 2016-12-29

US20160380189A1

Electricity

MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING APPARATUS OF MAGNETORESISTIVE EFFECT ELEMENT

#3 | 2015-07-23

US20150205890A1

Physics

TOPOGRAPHY SIMULATION APPARATUS, TOPOGRAPHY SIMULATION METHOD AND RECORDING MEDIUM

#4 | 2014-03-27

US20140087483A1

Electricity

MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING APPARATUS OF MAGNETORESISTIVE EFFECT ELEMENT

#5 | 2013-08-29

US20130220377A1

Performing operations; transporting

METHOD OF CLEANING A FILM-FORMING APPARATUS

#6 | 2009-08-06

US20090194508A1

Electricity

Substrate plasma processing apparatus and plasma processing method

#7 | 2009-02-26

US20090055143A1

Physics

Simulation method and simulation program

#8 | 2009-02-19

US20090048813A1

Physics

SIMULATION METHOD AND SIMULATION PROGRAM

#9 | 2008-10-02

US20080237185A1

Electricity

Plasma processing apparatus of substrate and plasma processing method thereof

#10 | 2007-06-14

US20070134433A1

Electricity

METHODS FOR PRODUCING SILICON NITRIDE FILMS AND SILICON OXYNITRIDE FILMS BY THERMAL CHEMICAL VAPOR DEPOSITION

#11 | 2006-09-28

US20060216875A1

Electricity

Method for annealing and method for manufacturing a semiconductor device

#12 | 2006-09-07

US20060198958A1

Electricity

Methods for producing silicon nitride films by vapor-phase growth

#13 | 2006-03-30

US20060065289A1

Performing operations; transporting

Method of cleaning a film-forming apparatus

#14 | 2005-05-12

US20050100670A1

Electricity

Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition

#15 | 2005-04-21

US20050082002A1

Performing operations; transporting

Method of cleaning a film-forming apparatus and film-forming apparatus

InventorID:

408007 ⎘