Inventor profile of:

Jochen Beintner

City:

Wappingers Falls, New York

Country:

United States

Published Applications:

21

Last publication date:

2008-07-24

Top Assignees for applications by Jochen Beintner

The entities that hold a legal rights for patent applications filed by inventor Beintner Jochen:

Recent patent applications by Beintner Jochen

Jochen Beintner from Wappingers Falls, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2008-07-24
US20080176365A1
Electricity

Method of making double-gated self-aligned finFET having gates of different lengths

#2 | 2008-01-10
US20080006852A1
Electricity

Dense chevron finFET and method of manufacturing same

#3 | 2007-08-09
US20070181930A1
Electricity

Structure and method of making double-gated self-aligned finFET having gates of different lengths

#4 | 2007-03-22
US20070063276A1
Electricity

Dense chevron finFET and method of manufacturing same

#5 | 2006-08-15
US10314865
-

TEOS assisted oxide CMP process

#6 | 2006-06-15
US20060128111A1
Electricity

Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI sructure with elevated source/drain

#7 | 2006-02-09
US20060030106A1
Electricity

Gate conductor isolation and method for manufacturing same

#8 | 2006-02-02
US20060024930A1
Electricity

Method of implanting using a shadow effect

#9 | 2006-01-17
US10250046
-

Method of forming a collar using selective SiGe/Amorphous Si Etch

#10 | 2005-12-15
US20050277271A1
Electricity

Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain

#11 | 2005-11-22
US9714356
-

Nitrogen implantation using a shadow effect to control gate oxide thickness in DRAM semiconductor

#12 | 2005-11-01
US10803395
-

Pitcher-shaped active area for field effect transistor and method of forming same

#13 | 2005-09-20
US10688612
-

Self-aligned buried strap process using doped HDP oxide

#14 | 2005-07-21
US20050158961A1
Electricity

Trench capacitor with buried strap

#15 | 2005-07-21
US20050158927A1
Electricity

Structure and method of forming a notched gate field effect transistor

#16 | 2005-07-14
US20050151181A1
Electricity

Nitrided STI liner oxide for reduced corner device impact on vertical device performance

#17 | 2005-06-16
US20050130364A1
Chemistry; metallurgy

Structure and method for ultra-small grain size polysilicon

#18 | 2005-06-14
US10249771
-

Structure and method of forming a notched gate field effect transistor

#19 | 2005-05-26
US20050110085A1
Electricity

Dual gate FinFet

#20 | 2005-05-17
US10249100
-

Process integration for integrated circuits

#21 | 2005-04-14
US20050079730A1
Electricity

Trench isolation employing a high aspect ratio trench

InventorID:

4090306 ⎘