Wappingers Falls, New York
United States
21
2008-07-24
The entities that hold a legal rights for patent applications filed by inventor Beintner Jochen:
Jochen Beintner from Wappingers Falls, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Method of making double-gated self-aligned finFET having gates of different lengths
#2 | 2008-01-10Dense chevron finFET and method of manufacturing same
#3 | 2007-08-09Structure and method of making double-gated self-aligned finFET having gates of different lengths
#4 | 2007-03-22Dense chevron finFET and method of manufacturing same
#5 | 2006-08-15TEOS assisted oxide CMP process
#6 | 2006-06-15Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI sructure with elevated source/drain
#7 | 2006-02-09Gate conductor isolation and method for manufacturing same
#8 | 2006-02-02Method of implanting using a shadow effect
#9 | 2006-01-17Method of forming a collar using selective SiGe/Amorphous Si Etch
#10 | 2005-12-15Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain
#11 | 2005-11-22Nitrogen implantation using a shadow effect to control gate oxide thickness in DRAM semiconductor
#12 | 2005-11-01Pitcher-shaped active area for field effect transistor and method of forming same
#13 | 2005-09-20Self-aligned buried strap process using doped HDP oxide
#14 | 2005-07-21Trench capacitor with buried strap
#15 | 2005-07-21Structure and method of forming a notched gate field effect transistor
#16 | 2005-07-14Nitrided STI liner oxide for reduced corner device impact on vertical device performance
#17 | 2005-06-16Structure and method for ultra-small grain size polysilicon
#18 | 2005-06-14Structure and method of forming a notched gate field effect transistor
#19 | 2005-05-26Dual gate FinFet
#20 | 2005-05-17Process integration for integrated circuits
#21 | 2005-04-14Trench isolation employing a high aspect ratio trench
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