Madhur Bobde

SEMICONDUCTOR PACKAGE HAVING LOW SIDE FIELD-EFFECT TRANSISTOR CHIPS OF DIFFERENT SIZES AND METHOD OF MAKING THE SAME

SEMICONDUCTOR PACKAGE SUPPRESSING ELECTRICAL COUPLING AND METHOD OF MAKING THE SAME

SEMICONDUCTOR PACKAGE HAVING VERTICALLY STACKED TRANSISTORS AND METHOD OF MAKING THE SAME

SEMICONDUCTOR PACKAGE HAVING COPPER PLATED SOURCE PADS AND METHOD OF MAKING THE SAME

Recessed Dummy Single Trench Gate IGBT

FABRICATION OF TRENCH TRANSISTOR WITH ESD IN TRENCH

SEMICONDUCTOR PACKAGE HAVING TWO OR MORE DRIVER DEVICES AND METHOD OF MAKING THE SAME

SEMICONDUCTOR PACKAGE HAVING PARTIALLY PLATED LEAD FLANK AND METHOD OF MAKING THE SAME

TRENCH TERMINATION STRUCTURE AND METHOD OF MAKING THEREOF

SEMICONDUCTOR PACKAGE HAVING WETTABLE LEAD FLANKS AND TIE BARS AND METHOD OF MAKING THE SAME

APPARATUS HAVING SURFACE MOUNT PACKAGES HAVING CO-PACKED FIELD EFFECT TRANSISTORS

PROGRAMMABLE GATE DESIGN FOR MULTIPLE GATE TRANSISTOR

CHIP SCALE SEMICONDUCTOR PACKAGE HAVING BACK SIDE METAL LAYER AND RAISED FRONT SIDE PAD AND METHOD OF MAKING THE SAME

DUAL P-BODY DOSE REVERSE-CONDUCTING (DPD-RC) IGBT STRUCTURE

Semiconductor package having wettable lead flanks and tie bars and method of making the same

High density shield gate transistor structure and method of making

Bottom source trench MOSFET with shield electrode

SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS

Semiconductor package having thin substrate and method of making the same

Wafer level chip scale semiconductor package

DMOS FET chip scale package and method of making the same

IGBT light load efficiency

SiC MOSFET with reduced channel length and high V

Method for semi-wafer level packaging

Silicon carbide trench semiconductor device

Semiconductor package having thin substrate and method of making the same

Improving IGBT light load efficiency

Intelligent power module containing IGBT and super-junction MOSFET

Common source land grid array package

Schottky diode integrated into superjunction power MOSFETs

PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS

SGT superjunction MOSFET structure

Schottky diode integrated into superjunction power MOSFETs

Trench MOSFET device and the preparation method thereof

Scalable SGT structure with improved FOM

Compact source ballast trench MOSFET and method of manufacturing

Transistor structure with improved unclamped inductive switching immunity

Methods for fabricating anode shorted field stop insulated gate bipolar transistor

Semiconductor device with field threshold MOSFET for high voltage termination

TVS structures for high surge and low capacitance

Trench MOSFET device and the preparation method thereof

Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof

Device structure having inter-digitated back to back MOSFETs

DIODE STRUCTURES WITH CONTROLLED INJECTION EFFICIENCY FOR FAST SWITCHING

Dual-gate trench IGBT with buried floating P-type shield

Process method and structure for high voltage MOSFETs

Semiconductor device with threshold MOSFET for high voltage termination

TVS structures for high surge and low capacitance

MANUFACTURING METHODS FOR ACCURATELY ALIGNED AND SELF-BALANCED SUPERJUNCTION DEVICES

Transient voltage suppressor (TVS) with reduced breakdown voltage

TERMINATION OF HIGH VOLTAGE (HV) DEVICES WITH NEW CONFIGURATIONS AND METHODS

Dual-gate trench IGBT with buried floating P-type shield

Methods for fabricating anode shorted field stop insulated gate bipolar transistor

Transistor structure with improved unclamped inductive switching immunity

Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs

Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area

Split-gate trench power MOSFET with protected shield oxide

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

Transistor structure with improved unclamped inductive switching immunity

Method of forming SGT MOSFETs with improved termination breakdown voltage

Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof

TERMINATION OF HIGH VOLTAGE (HV) DEVICES WITH NEW CONFIGURATIONS AND METHODS

Semiconductor device with field threshold MOSFET for high voltage termination

Manufacturing methods for accurately aligned and self-balanced superjunction devices

Injection control in semiconductor power devices

Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs

Edge termination configurations for high voltage semiconductor power devices

Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

BURIED FIELD RING FIELD EFFECT TRANSISTOR (BUF-FET) INTEGRATED WITH CELLS IMPLANTED WITH HOLE SUPPLY PATH

Process method and structure for high voltage MOSFETS

Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

Termination design for nanotube MOSFET

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

High voltage field balance metal oxide field effect transistor (FBM)

Dual-gate trench IGBT with buried floating P-type shield

High voltage fast recovery trench diode

Termination trench for power MOSFET applications

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

Uni-directional transient voltage suppressor (TVS)

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage

High voltage fast recovery trench diode

High voltage field balance metal oxide field effect transistor (FBM)

Staggered column superjunction

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Manufacturing methods for accurately aligned and self-balanced superjunction devices

Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path

Methods for fabricating anode shorted field stop insulated gate bipolar transistor

Termination of high voltage (HV) devices with new configurations and methods

Semiconductor device with field threshold MOSFET for high voltage termination

Uni-directional transient voltage suppressor (TVS)

Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage

Split-gate structure in trench-based silicon carbide power device

Edge termination configurations for high voltage semiconductor power devices

METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR