Assignee profile:

VISHAY-SILICONIX

City:

Santa Clara, California

Country:

United States

Published Applications:

99

Last publication date:

2017-09-21

Patent Grants:

95

Last grant date:

2018-05-22

Top Inventors for applications by VISHAY-SILICONIX

These are the the leading inventors for applications assigned to VISHAY-SILICONIX:

Recent patent applications by VISHAY-SILICONIX

VISHAY-SILICONIX based in Santa Clara, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2017-09-21 ✅ Patent 9,978,859 granted on 2018-05-22
US20170271498A1
Electricity

Semiconductor device with non-uniform trench oxide layer

#2 | 2017-04-27 ✅ Patent 10,084,037 granted on 2018-09-25
US20170117354A1
Electricity

MOSFET active area and edge termination area charge balance

#3 | 2017-01-12 ✅ Patent 9,673,314 granted on 2017-06-06
US20170012118A1
Electricity

Semiconductor device with non-uniform trench oxide layer

#4 | 2016-12-08 ✅ Patent 9,893,168 granted on 2018-02-13
US20160359018A1
Electricity

Split gate semiconductor device with curved gate oxide profile

#5 | 2016-08-04 ✅ Patent 10,546,750 granted on 2020-01-28
US20160225622A1
Electricity

System and method for substrate wafer back side and edge cross section seals

#6 | 2016-07-28 ✅ Patent 9,716,166 granted on 2017-07-25
US20160218196A1
Electricity

Transistor structure with improved unclamped inductive switching immunity

#7 | 2016-02-25 ✅ Patent 9,882,044 granted on 2018-01-30
US20160056281A1
Electricity

Edge termination for super-junction MOSFETs

#8 | 2016-02-25 ✅ Patent 9,425,304 granted on 2016-08-23
US20160056276A1
Electricity

Transistor structure with improved unclamped inductive switching immunity

#9 | 2015-12-24 ✅ Patent 9,887,259 granted on 2018-02-06
US20150372078A1
Electricity

Modulated super junction power MOSFET devices

#10 | 2015-12-24 ✅ Patent 9,508,596 granted on 2016-11-29
US20150372077A1
Electricity

Processes used in fabricating a metal-insulator-semiconductor field effect transistor

#11 | 2015-08-27 ✅ Patent 9,443,959 granted on 2016-09-13
US20150243779A1
Electricity

Transistor structure with feed-through source-to-substrate contact

#12 | 2015-06-11 ✅ Patent 10,395,970 granted on 2019-08-27
US20150162401A1
Electricity

Dual trench structure

#13 | 2015-04-23
US20150108568A1
Electricity

SEMICONDUCTOR STRUCTURE WITH HIGH ENERGY DOPANT IMPLANTATION

#14 | 2015-03-05 ✅ Patent 9,831,336 granted on 2017-11-28
US20150061000A1
Electricity

Process for forming a short channel trench MOSFET and device formed thereby

#15 | 2015-01-01 ✅ Patent 9,787,309 granted on 2017-10-10
US20150002192A1
Electricity

Methods for preventing reverse conduction

#16 | 2014-12-18 ✅ Patent 9,595,503 granted on 2017-03-14
US20140370661A1
Electricity

Dual lead frame semiconductor package and method of manufacture

#17 | 2014-11-13 ✅ Patent 9,184,152 granted on 2015-11-10
US20140332939A1
Electricity

Dual lead frame semiconductor package and method of manufacture

#18 | 2014-09-18 ✅ Patent 9,589,929 granted on 2017-03-07
US20140273344A1
Electricity

Method for fabricating stack die package

#19 | 2014-09-18 ✅ Patent 9,966,330 granted on 2018-05-08
US20140264804A1
Electricity

Stack die package

#20 | 2014-08-21 ✅ Patent 8,883,580 granted on 2014-11-11
US20140235023A1
Electricity

Trench metal oxide semiconductor with recessed trench material and remote contacts

#21 | 2014-07-24 ✅ Patent 9,761,696 granted on 2017-09-12
US20140206165A1
Electricity

Self-aligned trench MOSFET and method of manufacture

#22 | 2014-07-03 ✅ Patent 9,853,140 granted on 2017-12-26
US20140183624A1
Electricity

Adaptive charge balanced MOSFET techniques

#23 | 2014-04-10 ✅ Patent 9,064,896 granted on 2015-06-23
US20140099765A1
Electricity

Transistor structure with feed-through source-to-substrate contact

#24 | 2014-03-20 ✅ Patent 9,722,041 granted on 2017-08-01
US20140077287A1
Electricity

Breakdown voltage blocking device

#25 | 2014-02-06 ✅ Patent 8,836,404 granted on 2014-09-16
US20140035657A1
Electricity

Circuit for preventing reverse conduction

#26 | 2013-12-05 ✅ Patent 9,842,911 granted on 2017-12-12
US20130320462A1
Electricity

Adaptive charge balanced edge termination

#27 | 2013-11-12 ✅ Patent 8,582,258 granted on 2013-11-12
US12552205
-

Electrostatic discharge protection circuit for integrated circuits

#28 | 2013-10-24 ✅ Patent 9,793,706 granted on 2017-10-17
US20130279057A1
Electricity

Current limiting systems and methods

#29 | 2013-08-15 ✅ Patent 9,614,043 granted on 2017-04-04
US20130207227A1
Electricity

MOSFET termination trench

#30 | 2013-07-04 ✅ Patent 9,423,812 granted on 2016-08-23
US20130169243A1
Physics

Current mode boost converter using slope compensation

#31 | 2013-06-06 ✅ Patent 9,431,249 granted on 2016-08-30
US20130140633A1
Electricity

Edge termination for super junction MOSFET devices

#32 | 2013-02-14 ✅ Patent 8,697,571 granted on 2014-04-15
US20130040457A1
Electricity

Power MOSFET contact metallization

#33 | 2013-02-05 ✅ Patent 8,367,500 granted on 2013-02-05
US10378766
-

Method of forming self aligned contacts for a power MOSFET

#34 | 2012-11-22 ✅ Patent 11,114,559 granted on 2021-09-07
US20120292696A1
Electricity

Semiconductor device having reduced gate charges and superior figure of merit

#35 | 2012-08-30
US20120220092A1
Electricity

METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR

#36 | 2012-08-23
US20120211828A1
Electricity

HYBRID SPLIT GATE SEMICONDUCTOR

#37 | 2012-05-10 ✅ Patent 8,822,273 granted on 2014-09-02
US20120112331A1
Electricity

Dual lead frame semiconductor package and method of manufacture

#38 | 2012-03-22 ✅ Patent 9,431,550 granted on 2016-08-30
US20120068178A1
Electricity

Trench polysilicon diode

#39 | 2011-12-06 ✅ Patent 8,072,013 granted on 2011-12-06
US12611865
-

Trench polysilicon diode

#40 | 2011-11-03 ✅ Patent 8,604,525 granted on 2013-12-10
US20110266620A1
Electricity

Transistor structure with feed-through source-to-substrate contact

#41 | 2011-10-20 ✅ Patent 9,577,089 granted on 2017-02-21
US20110254084A1
Electricity

Structures and methods of fabricating dual gate devices

#42 | 2011-10-13 ✅ Patent 9,412,880 granted on 2016-08-09
US20110248284A1
Electricity

Schottky diode with improved surge capability

#43 | 2011-09-01 ✅ Patent 9,425,305 granted on 2016-08-23
US20110210406A1
Electricity

Structures of and methods of fabricating split gate MIS devices

#44 | 2011-08-18 ✅ Patent 8,735,992 granted on 2014-05-27
US20110198704A1
Electricity

Power switch with active snubber

#45 | 2011-07-21 ✅ Patent 8,586,419 granted on 2013-11-19
US20110175217A1
Electricity

Semiconductor packages including die and L-shaped lead and method of manufacture

#46 | 2011-06-30 ✅ Patent 8,895,424 granted on 2014-11-25
US20110159675A1
Electricity

Process for forming schottky rectifier with PtNi silicide schottky barrier

#47 | 2011-05-05 ✅ Patent 9,306,056 granted on 2016-04-05
US20110101525A1
Electricity

Semiconductor device with trench-like feed-throughs

#48 | 2011-04-28 ✅ Patent 10,026,835 granted on 2018-07-17
US20110095359A1
Electricity

Field boosted metal-oxide-semiconductor field effect transistor

#49 | 2011-04-21 ✅ Patent 9,431,530 granted on 2016-08-30
US20110089486A1
Electricity

Super-high density trench MOSFET

#50 | 2011-04-21 ✅ Patent 9,419,129 granted on 2016-08-16
US20110089485A1
Electricity

Split gate semiconductor device with curved gate oxide profile

#51 | 2011-03-03 ✅ Patent 9,443,974 granted on 2016-09-13
US20110053326A1
Electricity

Super junction trench power MOSFET device fabrication

#52 | 2011-03-03 ✅ Patent 9,230,810 granted on 2016-01-05
US20110049682A1
Electricity

System and method for substrate wafer back side and edge cross section seals

#53 | 2011-03-03 ✅ Patent 9,425,306 granted on 2016-08-23
US20110049614A1
Electricity

Super junction trench power MOSFET devices

#54 | 2011-02-24 ✅ Patent 9,324,858 granted on 2016-04-26
US20110042742A1
Electricity

Trench-gated MIS devices

#55 | 2011-01-11 ✅ Patent 7,868,381 granted on 2011-01-11
US11982906
-

Structures of and methods of fabricating trench-gated MIS devices

#56 | 2010-11-16 ✅ Patent 7,833,863 granted on 2010-11-16
US12107738
-

Method of manufacturing a closed cell trench MOSFET

#57 | 2010-09-02 ✅ Patent 8,928,138 granted on 2015-01-06
US20100219519A1
Physics

Complete power management system implemented in a single surface mount package

#58 | 2010-01-28 ✅ Patent 7,960,947 granted on 2011-06-14
US20100019751A1
Electricity

Adaptive frequency compensation for DC-to-DC converter

#59 | 2010-01-05 ✅ Patent 7,642,164 granted on 2010-01-05
US10951831
-

Method of forming self aligned contacts for a power MOSFET

#60 | 2009-11-12
US20090278179A1
Electricity

CHIP SCALE SURFACE MOUNT PACKAGE FOR SEMICONDUCTOR DEVICE AND PROCESS OF FABRICATING THE SAME

#61 | 2009-11-12 ✅ Patent 8,269,263 granted on 2012-09-18
US20090278176A1
Electricity

High current density power field effect transistor

#62 | 2009-10-15 ✅ Patent 9,040,356 granted on 2015-05-26
US20090256246A1
Electricity

Semiconductor including cup-shaped leadframe packaging techniques

#63 | 2009-09-29 ✅ Patent 7,595,547 granted on 2009-09-29
US11151749
-

Semiconductor die package including cup-shaped leadframe

#64 | 2009-09-01 ✅ Patent 7,583,485 granted on 2009-09-01
US11190682
-

Electrostatic discharge protection circuit for integrated circuits

#65 | 2009-08-13 ✅ Patent 10,600,902 granted on 2020-03-24
US20090200578A1
Electricity

Self-repairing field effect transisitor

#66 | 2009-07-09 ✅ Patent 8,928,157 granted on 2015-01-06
US20090174055A1
Electricity

Encapsulation techniques for leadless semiconductor packages

#67 | 2009-04-23 ✅ Patent 9,412,833 granted on 2016-08-09
US20090104751A1
Electricity

Narrow semiconductor trench structure

#68 | 2009-04-09 ✅ Patent 9,484,451 granted on 2016-11-01
US20090090967A1
Electricity

MOSFET active area and edge termination area charge balance

#69 | 2009-02-26 ✅ Patent 8,183,629 granted on 2012-05-22
US20090050960A1
Electricity

Stacked trench metal-oxide-semiconductor field effect transistor device

#70 | 2009-02-24 ✅ Patent 7,494,876 granted on 2009-02-24
US11112403
-

Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same

#71 | 2009-01-01 ✅ Patent 8,222,874 granted on 2012-07-17
US20090001943A1
Physics

Current mode boost converter using slope compensation

#72 | 2008-10-23 ✅ Patent 8,368,126 granted on 2013-02-05
US20080258212A1
Electricity

Trench metal oxide semiconductor with recessed trench material and remote contacts

#73 | 2008-10-09 ✅ Patent 9,947,770 granted on 2018-04-17
US20080246081A1
Electricity

Self-aligned trench MOSFET and method of manufacture

#74 | 2008-10-02 ✅ Patent 9,496,420 granted on 2016-11-15
US20080237608A1
Electricity

Molybdenum barrier metal for SiC Schottky diode and process of manufacture

#75 | 2008-09-11 ✅ Patent 9,437,424 granted on 2016-09-06
US20080220571A1
Electricity

High mobility power metal-oxide semiconductor field-effect transistors

#76 | 2008-07-10 ✅ Patent 9,437,729 granted on 2016-09-06
US20080164515A1
Electricity

High-density power MOSFET with planarized metalization

#77 | 2008-07-03 ✅ Patent 9,887,266 granted on 2018-02-06
US20080157281A1
Electricity

Ultra-low drain-source resistance power MOSFET

#78 | 2008-06-12 ✅ Patent 7,612,431 granted on 2009-11-03
US20080135872A1
Electricity

Trench polysilicon diode

#79 | 2008-05-08 ✅ Patent 9,136,060 granted on 2015-09-15
US20080108202A1
Electricity

Precision high-frequency capacitor formed on semiconductor substrate

#80 | 2008-03-18 ✅ Patent 7,344,945 granted on 2008-03-18
US11023327
-

Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor

#81 | 2008-02-26 ✅ Patent 7,335,946 granted on 2008-02-26
US10898431
-

Structures of and methods of fabricating trench-gated MIS devices

#82 | 2008-01-17 ✅ Patent 8,883,595 granted on 2014-11-11
US20080012068A1
Electricity

Process for forming a short channel trench MOSFET and device formed thereby

#83 | 2007-12-13 ✅ Patent 8,471,390 granted on 2013-06-25
US20070284754A1
Electricity

Power MOSFET contact metallization

#84 | 2007-11-15 ✅ Patent 9,425,043 granted on 2016-08-23
US20070262360A1
Electricity

High mobility power metal-oxide semiconductor field-effect transistors

#85 | 2007-10-11 ✅ Patent 9,111,754 granted on 2015-08-18
US20070236843A1
Electricity

Floating gate structure with high electrostatic discharge performance

#86 | 2007-10-11 ✅ Patent 7,589,396 granted on 2009-09-15
US20070235774A1
Electricity

Chip scale surface mount package for semiconductor device and process of fabricating the same

#87 | 2007-06-28 ✅ Patent 7,544,545 granted on 2009-06-09
US20070145411A1
Electricity

Trench polysilicon diode

#88 | 2007-05-01 ✅ Patent 7,211,877 granted on 2007-05-01
US11082080
-

Chip scale surface mount package for semiconductor device and process of fabricating the same

#89 | 2007-03-22 ✅ Patent 8,471,381 granted on 2013-06-25
US20070063341A1
Physics

Complete power management system implemented in a single surface mount package

#90 | 2007-03-22 ✅ Patent 9,093,359 granted on 2015-07-28
US20070063340A1
Physics

Complete power management system implemented in a single surface mount package

#91 | 2007-03-01 ✅ Patent 9,685,524 granted on 2017-06-20
US20070048966A1
Electricity

Narrow semiconductor trench structure

#92 | 2006-09-28 ✅ Patent 9,419,092 granted on 2016-08-16
US20060214242A1
Electricity

Termination for SiC trench devices

#93 | 2006-08-10 ✅ Patent 7,880,446 granted on 2011-02-01
US20060176098A1
Electricity

Adaptive frequency compensation for DC-to-DC converter

#94 | 2006-02-28 ✅ Patent 7,005,347 granted on 2006-02-28
US10832776
-

Structures of and methods of fabricating trench-gated MIS devices

#95 | 2005-10-13 ✅ Patent 8,080,459 granted on 2011-12-20
US20050224891A1
Electricity

Self aligned contact in a semiconductor device and method of fabricating the same

#96 | 2005-07-07 ✅ Patent 7,361,558 granted on 2008-04-22
US20050148128A1
Electricity

Method of manufacturing a closed cell trench MOSFET

#97 | 2005-06-14 ✅ Patent 6,906,380 granted on 2005-06-14
US10846339
-

Drain side gate trench metal-oxide-semiconductor field effect transistor

#98 | 2005-06-02 ✅ Patent 7,279,743 granted on 2007-10-09
US20050116282A1
Electricity

Closed cell trench metal-oxide-semiconductor field effect transistor

#99 | 2005-02-22 ✅ Patent 6,858,471 granted on 2005-02-22
US10247906
-

Semiconductor substrate with trenches for reducing substrate resistance

Also check out Vishay-Siliconix's (Santa Clara, United States) applicant profile with 40 patent applications submitted.

AssigneeID:

9448 ⎘