Inventor profile of:

Shigeru MORI

City:

Tokyo

Country:

Japan

Published Applications:

22

Last publication date:

2020-06-18

Top Assignees for applications by Shigeru MORI

The entities that hold a legal rights for patent applications filed by inventor MORI Shigeru:

Recent patent applications by MORI Shigeru

Shigeru MORI from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-06-18
US20200194353A1
Electricity

Package and terminal arrangement for semiconductor module

#2 | 2019-08-22
US20190259681A1
Electricity

Semiconductor module and semiconductor device

#3 | 2019-04-18
US20190115283A1
Electricity

Power module

#4 | 2019-04-04
US20190103297A1
Electricity

Semiconductor device sorting system and semiconductor device

#5 | 2013-08-29
US20130221440A1
Electricity

Method of manufacturing a semiconductor device

#6 | 2012-03-08
US20120058646A1
Electricity

Method of manufacturing a semiconductor device with a front-end insulating layer interposed between a semiconductor layer and an insulating substrate

#7 | 2010-11-11
US20100283106A1
Electricity

Semiconductor device having semiconductor layer on insulating structure and method of manufacturing the same

#8 | 2009-12-15
US10241227
-

Product counseling system, product development program, and machine-readable recording medium

#9 | 2009-11-19
US20090286374A1
Electricity

Semiconductor device and method for manufacturing same

#10 | 2007-10-04
US20070228457A1
Electricity

Semiconductor device having semiconductor layer on insulating structure and method of manufacturing the same

#11 | 2007-03-01
US20070047158A1
Performing operations; transporting

Magneto-resistance effect element and magneto-resistance effect head

#12 | 2007-01-18
US20070012924A1
Electricity

Transistor with electrode-protecting insulating film

#13 | 2006-12-07
US20060274456A1
Performing operations; transporting

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

#14 | 2006-11-30
US20060268467A1
Performing operations; transporting

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

#15 | 2006-11-30
US20060268466A1
Performing operations; transporting

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

#16 | 2006-10-19
US20060232894A1
Performing operations; transporting

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

#17 | 2006-02-14
US10803144
-

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

#18 | 2006-01-12
US20060007606A1
Performing operations; transporting

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

#19 | 2005-10-18
US10326092
-

Silicon oxide film formation method

#20 | 2005-08-23
US9916529
-

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

#21 | 2005-06-07
US9853622
-

Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer

#22 | 2005-01-27
US20050019610A1
Electricity

Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same

InventorID:

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