Markus Schmitt

Diffusion soldering with contaminant protection

Diffusion soldering with contaminant protection

Latch-up resistant transistor device

Semiconductor device with buffer region

Method of manufacturing a semiconductor device

Semiconductor device

Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area

Latch-up resistant transistor

Semiconductor Device Comprising Electrostatic Discharge Protection Structure

Charge-compensation device

Method of forming a super junction semiconductor device having stripe-shaped regions of the opposite conductivity types

Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area

Semiconductor device comprising electrostatic discharge protection structure

Semiconductor device with electrostatic discharge protection structure

Semiconductor component having a passivation layer and production method

Charge compensation semiconductor devices

Trench transistor having a doped semiconductor region

Semiconductor Device with a Super Junction Structure with Compensation Layers and a Dielectric Layer

Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradient

Radiation-hardened power semiconductor devices and methods of forming them

Super junction semiconductor device comprising a cell area and an edge area

Lateral trench transistor, as well as a method for its production

Semiconductor component and method for producing it

Lateral semiconductor component with a drift zone having at least one field electrode