Carsten Schaeffer

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING AN OHMIC CONTACT AND A GATE DIELECTRIC

SEMICONDUCTOR DEVICE

SILICON CARBIDE DEVICE

VERTICAL POWER SEMICONDUCTOR DEVICE COMPRISING SOURCE OR EMITTER PAD

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF

Semiconductor device including bonding pad metal layer structure

High Voltage Semiconductor Device with Step Topography Passivation Layer Stack

CHIP ARRANGEMENT, CHIP PACKAGE, METHOD OF FORMING A CHIP ARRANGEMENT, AND METHOD OF FORMING A CHIP PACKAGE

SEMICONDUCTOR DEVICE

Semiconductor device protection using an anti-reflective layer

Semiconductor device including bonding pad metal layer structure

High Voltage Semiconductor Device with Step Topography Passivation Layer Stack

Semiconductor device and method of manufacturing a semiconductor device

Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

Semiconductor device and a method of forming the semiconductor device

Buried insulator regions and methods of formation thereof

Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

Forming a contact layer on a semiconductor body

Self-organizing barrier layer disposed between a metallization layer and a semiconductor region

Semiconductor device with a reduced band gap zone

Method of operating a reverse conducting IGBT

POWER SEMICONDUCTOR DEVICE,POWER ELECTRONIC MODULE, AND METHOD FOR PROCESSING A POWER SEMICONDUCTOR DEVICE

Semiconductor devices

Method of operating a reverse conducting IGBT

Semiconductor device with a passivation layer

Trench transistor having a doped semiconductor region

Semiconductor device with a passivation layer

Reverse conducting IGBT

Reverse Conducting IGBT

Lateral trench transistor, as well as a method for its production

Semiconductor device including a free wheeling diode