Inventor profile of:

James Pan

City:

Fishkill, New York

Country:

United States

Published Applications:

13

Last publication date:

2008-07-03

Top Assignees for applications by James Pan

The entities that hold a legal rights for patent applications filed by inventor Pan James:

Recent patent applications by Pan James

James Pan from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2008-07-03
US20080160688A1
Electricity

Methods for fabricating an integrated circuit

#2 | 2008-05-01
US20080102571A1
Electricity

Methods for fabricating a stress enhanced MOS transistor

#3 | 2008-02-12
US11154785
-

Methods for fabricating a semiconductor device, which include selectively depositing an electrically conductive material

#4 | 2007-12-13
US20070284654A1
Electricity

METAL ALLOY LAYER OVER CONDUCTIVE REGION OF TRANSISTOR DEVICE OF DIFFERENT CONDUCTIVE MATERIAL THAN CONDUCTIVE REGION

#5 | 2007-05-31
US20070122983A1
Electricity

Multi-operational mode transistor with multiple-channel device structure

#6 | 2007-05-31
US20070120199A1
Electricity

Low resistivity compound refractory metal silicides with high temperature stability

#7 | 2007-05-29
US10873240
-

Multi-channel transistor with tunable hot carrier effect

#8 | 2007-04-10
US10882208
-

Mesa isolation technology for extremely thin silicon-on-insulator semiconductor devices

#9 | 2006-08-15
US10988532
-

Replacement metal gate transistor with metal-rich silicon layer and method for making the same

#10 | 2006-06-13
US10777138
-

Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectric

#11 | 2006-03-28
US10788281
-

Dual metal CMOS transistors with silicon-metal-silicon stacked gate electrode

#12 | 2005-11-03
US20050245016A1
Electricity

Dual-metal CMOS transistors with tunable gate electrode work function and method of making the same

#13 | 2005-03-01
US10464508
-

Method of manufacturing semiconductor device comprising silicon-rich tasin metal gate electrode

InventorID:

4166614 ⎘