Fishkill, New York
United States
13
2008-09-04
The entities that hold a legal rights for patent applications filed by inventor Pan James N.:
James N. Pan from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Shallow trench isolation process and structure with minimized strained silicon consumption
#2 | 2006-12-14Low-power multiple-channel fully depleted quantum well CMOSFETs
#3 | 2006-04-25Strained silicon semiconductor on insulator MOSFET
#4 | 2005-09-13Semiconductor on insulator MOSFET having strained silicon channel
#5 | 2005-08-30Replacement gate strained silicon finFET process
#6 | 2005-08-16Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shift
#7 | 2005-07-14Method of fabricating an integrated circuit channel region
#8 | 2005-07-14Shallow trench isolation process and structure with minimized strained silicon consumption
#9 | 2005-05-19Low-power multiple-channel fully depleted quantum well CMOSFETs
#10 | 2005-05-17One step deposition method for high-k dielectric and metal gate electrode
#11 | 2005-03-03Method of growing as a channel region to reduce source/drain junction capacitance
#12 | 2005-03-03Formation of finFET using a sidewall epitaxial layer
#13 | 2005-02-15Self aligned double gate transistor having a strained channel region and process therefor
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