Inventor profile of:

David L. Bender

City:

Thousand Oaks, California

Country:

United States

Published Applications:

13

Last publication date:

2019-05-09

Top Assignees for applications by David L. Bender

The entities that hold a legal rights for patent applications filed by inventor Bender David L.:

Recent patent applications by Bender David L.

David L. Bender from Thousand Oaks, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-05-09
US20190136407A1
Chemistry; metallurgy

SINGLE CRYSTAL INGOTS WITH REDUCED DISLOCATION DEFECTS AND METHODS FOR PRODUCING SUCH INGOTS

#2 | 2018-04-12
US20180100246A1
Chemistry; metallurgy

SINGLE CRYSTAL INGOTS WITH REDUCED DISLOCATION DEFECTS AND METHODS FOR PRODUCING SUCH INGOTS

#3 | 2016-09-29
US20160281260A1
Chemistry; metallurgy

SYSTEMS FOR CONTINUOUS GROWING OF INGOTS

#4 | 2013-10-10
US20130263772A1
Chemistry; metallurgy

Method and apparatus for controlling melt temperature in a Czochralski grower

#5 | 2013-09-12
US20130233237A1
Chemistry; metallurgy

Weir method for improved single crystal growth in a continuous Czochralski process

#6 | 2013-05-30
US20130133567A1
Chemistry; metallurgy

SYSTEMS AND PROCESSES FOR CONTINUOUS GROWING OF INGOTS

#7 | 2012-09-11
US12075513
-

Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process

#8 | 2012-09-04
US12315452
-

Crucible weight measurement system for controlling feedstock introduction in Czochralski crystal growth

#9 | 2012-08-23
US20120210931A1
Chemistry; metallurgy

METHODS FOR CONTROLLING MELT TEMPERATURE IN A CZOCHRALSKI GROWER

#10 | 2010-07-01
US20100162946A1
Chemistry; metallurgy

System for continuous growing of monocrystalline silicon

#11 | 2008-06-12
US20080134958A1
Chemistry; metallurgy

System for continuous growing of monocrystalline silicon

#12 | 2005-10-06
US20050217656A1
Performing operations; transporting

Method and apparatus for cutting ultra thin silicon wafers

#13 | 2005-05-05
US20050092236A1
Chemistry; metallurgy

System for continuous growing of monocrystalline silicon

InventorID:

428450 ⎘