Robert Beach

GaN HEMT WITH REDUCED THRESHOLD SHIFTING

GaN HEMT WITH LOW THRESHOLD VOLTAGE SHIFT USING A HOLE INJECTOR/COLLECTOR

GaN DEVICE WITH HOLE ELIMINATION CENTERS

GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER

GaN DEVICE WITH HOLE ELIMINATION CENTERS

BIDIRECTIONAL GaN FET WITH SINGLE GATE

Cascaded bootstrapping GaN power switch and driver

Semiconductor devices with back surface isolation

Enhancement-mode GaN transistor with selective and nonselective etch layers for improved uniformity in GaN spacer thickness

Multi-step surface passivation structures and methods for fabricating same

GaN transistors with polysilicon layers used for creating additional components

Semiconductor devices with back surface isolation

Integrated circuit with matching threshold voltages and method for making same

GaN transistors with polysilicon layers used for creating additional components

Fabrication of semiconductor device using alternating high and low temperature layers

Fabrication of III-Nitride Power Semiconductor Device

Flip chip interconnection with reduced current density

High performance III-nitride power device

III-Nitride Semiconductor Device Fabrication

Fabrication of III-nitride semiconductor device and related structures

Integrated circuit with matching threshold voltages and method for making same

GaN device with reduced output capacitance and process for making same

GaN transistors with polysilicon layers for creating additional components

Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits

Isolation structure in gallium nitride devices and integrated circuits

III-Nitride Heterojunction Device

Fabrication of III-nitride semiconductor device and related structures

Enhancement mode GaN HEMT device

Ion implanted and self aligned gate structure for GaN transistors

Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same

Semiconductor devices with back surface isolation

VIA STRUCTURE OF A SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Dopant diffusion modulation in GaN buffer layers

Compensated gate MISFET and method for fabricating the same

Bumped, self-isolated GaN transistor chip with electrically isolated back surface

Enhancement mode GaN HEMT device and method for fabricating the same

Enhancement mode gallium nitride transistor with improved gate characteristics

Back diffusion suppression structures