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Inventor profile of:

Ryu Hirota

City:

Itami-shi

Country:

Japan

Published Applications:

15

Last publication date:

2020-01-30

Top Assignees for applications by Ryu Hirota

The entities that hold a legal rights for patent applications filed by inventor Hirota Ryu:

SUMITOMO ELECTRIC INDUSTRIES, LTD. 13 Osaka, Japan
SUMITOMO ELECTRIC INDUSTRIES, LTD. 6 Osaka-shi, Japan
Sumitomo Electric Industries, Ltd. 1 Osaka-shi, Osaka, Japan
SUMITOMO ELECTRONIC INDUSTRIES, LTD. 1 Osaka, Japan
Yusuke Mori 1 Katano-Shi, Japan

Recent patent applications by Hirota Ryu

Ryu Hirota from Itami-shi, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-01-30

US20200032419A1

Chemistry; metallurgy

Gallium nitride substrate

#2 | 2013-09-19

US20130244406A1

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE

#3 | 2012-06-07

US20120142168A1

Chemistry; metallurgy

III-V compound crystal and semiconductor electronic circuit element

#4 | 2011-10-27

US20110260295A1

Chemistry; metallurgy

III-nitride crystal substrate and III-nitride semiconductor device

#5 | 2011-03-17

US20110065265A1

Fabrication method and fabrication apparatus of group III nitride crystal substance

#6 | 2010-09-16

US20100229786A1

Chemistry; metallurgy

Method for Growing Group III Nitride Crystal

#7 | 2010-07-29

US20100189624A1

Chemistry; metallurgy

Group III nitride crystal and method of its growth

#8 | 2010-04-15

US20100090313A1

Chemistry; metallurgy

III-V compound crystal and semiconductor electronic circuit element

#9 | 2010-01-14

US20100009526A1

Fabrication method and fabrication apparatus of group III nitride crystal substance

#10 | 2009-03-19

US20090071394A1

Chemistry; metallurgy

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE

#11 | 2008-12-04

US20080299748A1

Group III-V Crystal

#12 | 2008-02-14

US20080038580A1

Group III-V crystal

#13 | 2007-06-28

US20070148920A1

Fabrication method and fabrication apparatus of group III nitride crystal substance

#14 | 2005-10-13

US20050227472A1

Group III-V crystal and manufacturing method thereof

#15 | 2005-07-14

US20050153471A1

Chemistry; metallurgy

Method of manufacturing group-III nitride crystal

InventorID:

444811 ⎘