SUMITOMO ELECTRONIC INDUSTRIES, LTD.

City:

Osaka

Country:

Japan

Published Applications:

Last publication date:

2024-05-02

Patent Grants:

Last grant date:

2024-05-14

Top Inventors for applications by SUMITOMO ELECTRONIC INDUSTRIES, LTD.

These are the the leading inventors for applications assigned to SUMITOMO ELECTRONIC INDUSTRIES, LTD.:

Koji Uematsu 2 Itami-shi, Japan
Seiji Nakahata 2 Itami-shi, Japan
Takuji Okahisa 2 Itami-shi, Japan
Masataka WATANABE 1 Osaka, Japan

Seiji Nakahata 1 Itami, Japan
Takuji Okahisa 1 Itami, Japan
Yukihiro TSUJI 1 Yokohama-shi, Japan
Naho Mizuhara 1 Itami-shi, Japan

Takashi SUMIYOSHI 1 Osaka-shi, Japan
Yukihiro Tsuji 1 Yokohama, Japan
Koji Uematsu 1 Itami, Japan
Naho Mizuhara 1 Itami, Japan

Ryu Hirota 1 Itami-shi, Japan
Hiroto ISHIBASHI 1 Yokohama-shi, Japan
Tsutomu HORI 1 Osaka, Japan
Hiroto Ishibashi 1 Yokohama, Japan

Takuo Hiratani 1 Osaka, Japan
Hideaki Nakahata 1 Itami, Japan
Hideaki Nakahata 1 Itami-shi, Japan
Michimasa Miyanaga 1 Itami, Japan

Taro ENOKIZONO 1 Osaka, Japan
Naoya KONO 1 Osaka, Japan
Michimasa Miyanaga 1 Itami-shi, Japan
Taro NISHIGUCHI 1 Osaka, Japan

Keisuke Tanizaki 1 Itami, Japan
Kensaku Motoki 1 Itami-shi, Japan
Keisuke Tanizaki 1 Itami-shi, Japan

Recent patent applications by SUMITOMO ELECTRONIC INDUSTRIES, LTD.

SUMITOMO ELECTRONIC INDUSTRIES, LTD. based in Osaka, JP has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2024-05-02

US20240146255A1

Electricity

AMPLIFIER

#2 | 2021-10-21 ✅ Patent 11,984,480 granted on 2024-05-14

US20210328024A1

Electricity

Silicon carbide epitaxial substrate

#3 | 2019-12-26 ✅ Patent 10,725,241 granted on 2020-07-28

US20190391332A1

Physics

Asymmetrical spot-size converter and method of manufacturing spot-size converter

#4 | 2014-06-26 ✅ Patent 8,872,309 granted on 2014-10-28

US20140175616A1

Electricity

Composite of III-nitride crystal on laterally stacked substrates

#5 | 2012-03-08 ✅ Patent 8,652,862 granted on 2014-02-18

US20120058582A1

Electricity

Method for etching insulating film and method for manufacturing semiconductor optical device

#6 | 2009-03-19

US20090071394A1

Chemistry; metallurgy

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE

#7 | 2007-10-25 ✅ Patent 7,426,224 granted on 2008-09-16

US20070248130A1

Electricity

Optical transmitter with a digitally controlled bias and modulation currents for a laser diode

Also check out Sumitomo Electronic Industries, Ltd.'s (Osaka, Japan) applicant profile with 1 patent applications submitted.

AssigneeID:

173125 ⎘