Inventor profile of:

Dae-Jin Kwon

City:

Seoul

Country:

South Korea

Published Applications:

12

Last publication date:

2006-10-19

Top Assignees for applications by Dae-Jin Kwon

The entities that hold a legal rights for patent applications filed by inventor Kwon Dae-Jin:

Recent patent applications by Kwon Dae-Jin

Dae-Jin Kwon from Seoul, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2006-10-19
US20060234466A1
Electricity

Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same

#2 | 2006-05-04
US20060094185A1
Electricity

Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same

#3 | 2006-04-13
US20060078678A1
Chemistry; metallurgy

Method of forming a thin film by atomic layer deposition

#4 | 2006-03-07
US10776053
-

Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode

#5 | 2006-01-19
US20060014398A1
Electricity

Method of forming dielectric layer using plasma enhanced atomic layer deposition technique

#6 | 2006-01-12
US20060006449A1
Electricity

Semiconductor integrated circuit devices having a hybrid dielectric layer and methods of fabricating the same

#7 | 2005-09-08
US20050196915A1
Electricity

Method of fabricating analog capacitor using post-treatment technique

#8 | 2005-07-14
US20050152094A1
Electricity

Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same

#9 | 2005-06-16
US20050130427A1
Chemistry; metallurgy

Method of forming thin film for improved productivity

#10 | 2005-04-28
US20050087879A1
Electricity

Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same

#11 | 2005-03-24
US20050063141A1
Electricity

Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same

#12 | 2005-01-06
US20050003089A1
Chemistry; metallurgy

Method of forming a carbon nano-material layer using a cyclic deposition technique

InventorID:

4549022 ⎘