Hirschfeld
Germany
9
2013-09-26
The entities that hold a legal rights for patent applications filed by inventor Berthold Heike:
Heike Berthold from Hirschfeld, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
High-K gate electrode structure formed after transistor fabrication by using a spacer
#2 | 2011-12-01Stress reduction in chip packaging by a stress compensation region formed around the chip
#3 | 2011-09-15Threshold adjustment for MOS devices by adapting a spacer width prior to implantation
#4 | 2010-07-29Method for adjusting the height of a gate electrode in a semiconductor device
#5 | 2010-06-03High-K gate electrode structure formed after transistor fabrication by using a spacer
#6 | 2009-12-31Threshold adjustment for MOS devices by adapting a spacer width prior to implantation
#7 | 2009-11-05Method for selectively removing a spacer in a dual stress liner approach
#8 | 2009-10-01Double deposition of a stress-inducing layer in an interlayer dielectric with intermediate stress relaxation in a semiconductor device
#9 | 2009-04-30METHOD FOR ADJUSTING THE HEIGHT OF A GATE ELECTRODE IN A SEMICONDUCTOR DEVICE
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