Beaverton, Oregon
United States
9
2006-02-09
The entities that hold a legal rights for patent applications filed by inventor Barnak John P.:
John P. Barnak from Beaverton, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Integrating n-type and p-type metal gate transistors
#2 | 2005-11-10Under bump metallization layer to enable use of high tin content solder bumps
#3 | 2005-11-03Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system
#4 | 2005-10-20Enhanced gate structure
#5 | 2005-10-11Integrating n-type and p-type metal gate transistors
#6 | 2005-09-29Under bump metallization layer to enable use of high tin content solder bumps
#7 | 2005-03-03Enhanced gate structure
#8 | 2005-02-24integrating n-type and P-type metal gate transistors
#9 | 2005-02-22Integrating n-type and p-type metal gate transistors
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