El Segundo, California
United States
21
2025-05-08
The entities that hold a legal rights for patent applications filed by inventor Ranjan Niraj:
Niraj Ranjan from El Segundo, US has applied for patents for these inventions. The list has both pending applications and granted patents:
SEMICONDUCTOR DEVICE HAVING A TRENCH FIELD ELECTRODE WITH A FIRST SECTION BURIED BELOW A GATE ELECTRODE A SECOND SECTION FOR CONTACTING
#2 | 2022-04-07FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR DEVICES
#3 | 2021-03-18Trench field electrode termination structure for transistor devices
#4 | 2017-12-21Schottky integrated high voltage terminations and related HVIC applications
#5 | 2017-09-28Single-Chip High Speed and High Voltage Level Shifter
#6 | 2017-07-27Method for Fabricating a Shallow and Narrow Trench FET
#7 | 2016-07-14IGBT having deep gate trench
#8 | 2016-06-16Vertical FET having reduced on-resistance
#9 | 2016-06-16Power FET Having Reduced Gate Resistance
#10 | 2016-06-02IGBT with buried emitter electrode
#11 | 2015-02-26Level shifter utilizing a capacitive isolation barrier
#12 | 2014-12-25Power semiconductor device with contiguous gate trenches and offset source trenches
#13 | 2014-05-01Buck converter power package
#14 | 2014-01-30Level shifter having feedback signal from high voltage circuit
#15 | 2014-01-30Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
#16 | 2013-10-10Trench FET with ruggedness enhancement regions
#17 | 2013-10-03Deep gate trench IGBT
#18 | 2013-10-03IGBT with buried emitter electrode
#19 | 2011-11-24Method for fabricating a shallow and narrow trench FET and related structures
#20 | 2007-05-31Passivation structure with voltage equalizing loops
#21 | 2006-05-18Passivation structure with voltage equalizing loops
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