Inventor profile of:

Chiu Ng

City:

El Segundo, California

Country:

United States

Published Applications:

24

Last publication date:

2018-01-11

Top Assignees for applications by Chiu Ng

The entities that hold a legal rights for patent applications filed by inventor Ng Chiu:

Recent patent applications by Ng Chiu

Chiu Ng from El Segundo, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-01-11
US20180012983A1
Electricity

Semiconductor device having a superjunction structure

#2 | 2017-09-21
US20170271488A1
Electricity

Bipolar semiconductor device with multi-trench enhancement regions

#3 | 2017-09-21
US20170271487A1
Electricity

Bipolar semiconductor device with sub-cathode enhancement regions

#4 | 2017-09-21
US20170271445A1
Electricity

Bipolar Semiconductor Device Having Localized Enhancement Regions

#5 | 2016-09-08
US20160260825A1
Electricity

IGBT having a deep superjunction structure

#6 | 2016-09-08
US20160260824A1
Electricity

Bipolar semiconductor device having a charge-balanced inter-trench structure

#7 | 2016-09-08
US20160260823A1
Electricity

Bipolar semiconductor device having a deep charge-balanced structure

#8 | 2016-09-08
US20160260799A1
Electricity

IGBT having an inter-trench superjunction structure

#9 | 2016-07-14
US20160204238A1
Electricity

IGBT having deep gate trench

#10 | 2016-06-02
US20160155832A1
Electricity

IGBT with buried emitter electrode

#11 | 2013-10-03
US20130256745A1
Electricity

Deep gate trench IGBT

#12 | 2013-10-03
US20130256744A1
Electricity

IGBT with buried emitter electrode

#13 | 2009-06-11
US20090146177A1
Electricity

Variable threshold trench IGBT with offset emitter contacts

#14 | 2009-02-03
US10288696
-

Process to create buried heavy metal at selected depth

#15 | 2007-05-03
US20070096167A1
Electricity

Trench IGBT with depletion stop layer

#16 | 2007-04-19
US20070085148A1
Electricity

Trench IGBT for highly capacitive loads

#17 | 2007-03-22
US20070063269A1
Electricity

Trench IGBT with increased short circuit capability

#18 | 2007-02-15
US20070034941A1
Electricity

Deep N diffusion for trench IGBT

#19 | 2007-02-01
US20070026577A1
Electricity

High voltage non punch through IGBT for switch mode power supplies

#20 | 2006-05-04
US20060094179A1
Electricity

IGBT with amorphous silicon transparent collector

#21 | 2006-02-28
US9566219
-

IGBT with amorphous silicon transparent collector

#22 | 2005-10-13
US20050227461A1
Electricity

Semiconductor device having increased switching speed

#23 | 2005-09-29
US20050212039A1
Electricity

Angled implant for shorter trench emitter

#24 | 2005-07-19
US10389857
-

Angled implant for shorter trench emitter

InventorID:

463050 ⎘