Inventor profile of:

Ken HAMADA

City:

Tokyo

Country:

Japan

Published Applications:

15

Last publication date:

2025-07-17

Top Assignees for applications by Ken HAMADA

The entities that hold a legal rights for patent applications filed by inventor HAMADA Ken:

Recent patent applications by HAMADA Ken

Ken HAMADA from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-07-17
US20250230574A1
Chemistry; metallurgy

METHOD AND APPARATUS FOR PRODUCING SILICON SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON WAFER

#2 | 2025-02-06
US20250043459A1
Chemistry; metallurgy

MANUFACTURING METHOD OF SINGLE CRYSTAL AND SINGLE CRYSTAL MANUFACTURING DEVICE

#3 | 2023-11-09
US20230357950A1
Chemistry; metallurgy

MANUFACTURING METHOD OF SINGLE CRYSTALS

#4 | 2023-07-13
US20230220583A1
Chemistry; metallurgy

SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION METHOD

#5 | 2017-04-06
US20170096747A1
Chemistry; metallurgy

Silicon single crystal manufacturing method

#6 | 2017-03-16
US20170076437A1
Physics

Method and apparatus for manufacturing single crystal

#7 | 2016-06-30
US20160186359A1
Chemistry; metallurgy

Method of manufacturing single crystal

#8 | 2016-05-26
US20160145764A1
Chemistry; metallurgy

Method of producing silicon single crystal

#9 | 2013-10-10
US20130263773A1
Chemistry; metallurgy

Silicon single crystal manufacturing apparatus and silicon single crystal manufacturing method

#10 | 2012-06-14
US20120145068A1
Chemistry; metallurgy

Apparatus of producing silicon single crystal and method of producing silicon single crystal

#11 | 2010-10-21
US20100263585A1
Chemistry; metallurgy

Method of controlling single crystal diameter

#12 | 2010-01-28
US20100018454A1
Chemistry; metallurgy

Method of producing single crystal

#13 | 2009-10-08
US20090249998A1
Chemistry; metallurgy

Single crystal pulling apparatus

#14 | 2006-12-21
US20060283377A1
Chemistry; metallurgy

Method for producing silicon single crystals and silicon single crystal produced thereby

#15 | 2006-12-21
US20060283373A1
Chemistry; metallurgy

Method for growing silicon single crystal

InventorID:

472839 ⎘