Redondo Beach, California
United States
37
2025-05-08
The entities that hold a legal rights for patent applications filed by inventor Ma Ling:
Ling Ma from Redondo Beach, US has applied for patents for these inventions. The list has both pending applications and granted patents:
SEMICONDUCTOR DEVICE HAVING A TRENCH FIELD ELECTRODE WITH A FIRST SECTION BURIED BELOW A GATE ELECTRODE A SECOND SECTION FOR CONTACTING
#2 | 2025-03-06SEMICONDUCTOR DEVICE HAVING AN ISOLATION STRUCTURE THAT DELIMITS A REGION OF AN EPITAXIAL LAYER OR LAYER STACK
#3 | 2024-06-13SEMICONDUCTOR DEVICE HAVING A SHIELDING LAYER AND A METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE
#4 | 2024-02-08POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN ACTIVE CELL REGION AND AN INACTIVE CELL REGION
#5 | 2023-10-19Isolation structure for separating different transistor regions on the same semiconductor die
#6 | 2023-05-25Field plate anchoring structure for trench-based semiconductor devices
#7 | 2023-05-11Method of producing a multi-chip assembly
#8 | 2023-03-30TRANSISTOR DEVICE AND METHOD FOR PRODUCING A TRANSISTOR DEVICE
#9 | 2022-07-21Semiconductor transistor device and method of manufacturing the same
#10 | 2022-04-07FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR DEVICES
#11 | 2022-03-24Semiconductor device having needle-shape field plate trenches and needle-shaped gate trenches
#12 | 2021-03-18Trench field electrode termination structure for transistor devices
#13 | 2020-11-05Superjunction device with oxygen inserted Si-layers
#14 | 2020-10-22Semiconductor transistor device and method of manufacturing the same
#15 | 2020-06-25Semiconductor transistor device and method of manufacturing the same
#16 | 2020-06-11Controlled resistance integrated snubber for power switching device
#17 | 2020-05-14Semiconductor device with superjunction and oxygen inserted Si-layers
#18 | 2019-11-21Combined gate trench and contact etch process and related structure
#19 | 2018-06-28Controlled resistance integrated snubber for power switching device
#20 | 2017-12-07Combined gate trench and contact etch process and related structure
#21 | 2017-07-27Method for Fabricating a Shallow and Narrow Trench FET
#22 | 2017-07-13Combined gate and source trench formation and related structure
#23 | 2017-06-29Method of forming a semiconductor structure having integrated snubber resistance
#24 | 2017-06-01Buried bus and related method
#25 | 2016-10-06Method of manufacturing a trench FET having a merged gate dielectric
#26 | 2016-06-16Power FET Having Reduced Gate Resistance
#27 | 2016-04-14Semiconductor structure having integrated snubber resistance
#28 | 2016-04-14Power semiconductor device with source trench and termination trench implants
#29 | 2015-11-12Power Semiconductor Device with Low RDSON and High Breakdown Voltage
#30 | 2014-12-25Power semiconductor device with contiguous gate trenches and offset source trenches
#31 | 2014-06-19Trench FET having merged gate dielectric
#32 | 2014-06-19Reduced Gate Charge Trench Field-Effect Transistor
#33 | 2014-05-01Buck converter power package
#34 | 2013-10-10Trench FET with ruggedness enhancement regions
#35 | 2012-08-23Trench MOSFET and method for fabricating same
#36 | 2011-11-24Method for fabricating a shallow and narrow trench FET and related structures
#37 | 2011-07-07Semiconductor device including a voltage controlled termination structure and method for fabricating same
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