Inventor profile of:

Jun Yuan

City:

Fishkill, New York

Country:

United States

Published Applications:

21

Last publication date:

2015-03-05

Top Assignees for applications by Jun Yuan

The entities that hold a legal rights for patent applications filed by inventor Yuan Jun:

Recent patent applications by Yuan Jun

Jun Yuan from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-03-05
US20150060770A1
Electricity

Light emitting diode (LED) using carbon materials

#2 | 2014-06-05
US20140154851A1
Electricity

Non-volatile graphene nanomechanical switch

#3 | 2014-06-05
US20140151786A1
Electricity

Non-volatile graphene nanomechanical switch

#4 | 2013-09-19
US20130244386A1
Electricity

Self-aligned carbon electronics with embedded gate electrode

#5 | 2013-08-01
US20130196476A1
Electricity

High threshold voltage NMOS transistors for low power IC technology

#6 | 2013-04-18
US20130095623A1
Electricity

Method to fabricate a vertical transistor having an asymmetric gate with two conductive layers having different work functions

#7 | 2013-04-18
US20130093021A1
Electricity

Carbon implant for workfunction adjustment in replacement gate transistor

#8 | 2013-04-18
US20130093018A1
Electricity

Carbon implant for workfunction adjustment in replacement gate transistor

#9 | 2013-04-18
US20130093000A1
Electricity

Vertical transistor having an asymmetric gate

#10 | 2013-04-11
US20130087759A1
Electricity

Light emitting diode (LED) using carbon materials

#11 | 2013-01-24
US20130020658A1
Electricity

Replacement gate electrode with planar work function material layers

#12 | 2012-12-27
US20120326228A1
Electricity

Self-aligned carbon electronics with embedded gate electrode

#13 | 2012-12-06
US20120306026A1
Electricity

REPLACEMENT GATE ELECTRODE WITH A TUNGSTEN DIFFUSION BARRIER LAYER

#14 | 2012-11-22
US20120292602A1
Electricity

Self-aligned carbon electronics with embedded gate electrode

#15 | 2012-10-04
US20120248509A1
Electricity

Structure and process for metal fill in replacement metal gate integration

#16 | 2012-06-07
US20120139062A1
Electricity

Self-aligned contact combined with a replacement metal gate/high-K gate dielectric

#17 | 2012-05-03
US20120104469A1
Electricity

Replacement gate MOSFET with a high performance gate electrode

#18 | 2012-04-26
US20120098067A1
Electricity

Structure of high-K metal gate semiconductor transistor

#19 | 2011-12-27
US12908016
-

Replacement metal gate method

#20 | 2010-09-23
US20100237425A1
Electricity

High threshold voltage NMOS transistors for low power IC technology

#21 | 2010-08-05
US20100197106A1
Electricity

Semiconductor embedded resistor generation

InventorID:

48340 ⎘