Thomas Hoffmann

City:

Hillsboro, Oregon

Country:

United States

Published Applications:

Last publication date:

2005-08-04

Top Assignees for applications by Thomas Hoffmann

The entities that hold a legal rights for patent applications filed by inventor Hoffmann Thomas:

Thomas Hoffmann from Hillsboro, US has applied for patents for these inventions. The list has both pending applications and granted patents:

Gate-induced strain for MOS performance improvement

Methods of manufacturing a stressed MOS transistor structure

Increasing stress-enhanced drive current in a MOS transistor

InventorID:

4842647 ⎘