Beaverton, Oregon
United States
42
2024-07-04
The entities that hold a legal rights for patent applications filed by inventor Ban Ibrahim:
Ibrahim Ban from Beaverton, US has applied for patents for these inventions. The list has both pending applications and granted patents:
TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS
#2 | 2024-06-27INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH
#3 | 2023-03-02GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYER EPITAXY AND LAYER TRANSFER
#4 | 2023-02-23GALLIUM NITRIDE (GAN) LAYER TRANSFER AND REGROWTH FOR INTEGRATED CIRCUIT TECHNOLOGY
#5 | 2022-12-29Floating body memory cell having gates favoring different conductivity type regions
#6 | 2022-03-243D HETEROGENEOUS INTEGRATED CRYSTALLINE PIEZOELECTRIC BULK ACOUSTIC RESONATORS
#7 | 2021-06-24BROADBAND ACOUSTIC WAVE RESONATOR (AWR) FILTERS
#8 | 2021-05-27Floating body memory cell having gates favoring different conductivity type regions
#9 | 2020-10-01Floating body memory cell having gates favoring different conductivity type regions
#10 | 2020-07-02Group III-nitride devices with improved RF performance and their methods of fabrication
#11 | 2020-05-07Integrated circuit components with substrate cavities
#12 | 2019-12-19Floating body memory cell having gates favoring different conductivity type regions
#13 | 2019-01-31Floating body memory cell having gates favoring different conductivity type regions
#14 | 2018-08-09Floating body memory cell having gates favoring different conductivity type regions
#15 | 2017-07-20Floating body memory cell having gates favoring different conductivity type regions
#16 | 2017-03-02Floating body memory cell having gates favoring different conductivity type regions
#17 | 2016-11-03Floating body memory cell having gates favoring different conductivity type regions
#18 | 2016-06-02Floating body memory cell having gates favoring different conductivity type regions
#19 | 2016-03-31Integrated Terahertz sensor
#20 | 2015-06-25Floating body memory cell having gates favoring different conductivity type regions
#21 | 2014-06-26Optical photonic circuit coupling
#22 | 2014-03-27VERTICAL LIGHT COUPLER
#23 | 2014-01-16Floating body memory cell having gates favoring different conductivity type regions
#24 | 2014-01-02Waveguide integration on laser for alignment-tolerant assembly
#25 | 2013-10-24Fabrication of planar light-wave circuits (PLCS) for optical I/O
#26 | 2012-10-25Floating body memory cell having gates favoring different conductivity type regions
#27 | 2010-06-24Back gate doping for SOI substrates
#28 | 2010-03-25Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory
#29 | 2009-10-29Localized spacer for a multi-gate transistor
#30 | 2009-07-02Method of preparing active silicon regions for CMOS or other devices
#31 | 2009-06-11Independently controlled, double gate nanowire memory cell with self-aligned contacts
#32 | 2009-01-15Tri-gate integration with embedded floating body memory cell using a high-K dual metal gate
#33 | 2008-10-02Localized spacer for a multi-gate transistor
#34 | 2008-06-26Floating body memory cell having gates favoring different conductivity type regions
#35 | 2008-02-07Double gate transistor, method of manufacturing same, and system containing same
#36 | 2007-12-27Double gate transistor, method of manufacturing same, and system containing same
#37 | 2007-12-06Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory
#38 | 2007-09-27Substrate patterning for multi-gate transistors
#39 | 2007-06-28Independently controlled, double gate nanowire memory cell with self-aligned contacts
#40 | 2007-06-14Tri-gate integration with embedded floating body memory cell using a high-K dual metal gate
#41 | 2006-02-09Method to produce highly doped polysilicon thin films
#42 | 2005-11-17Stepped tip junction with spacer layer
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