Ann Arbor, Michigan
United States
70
2026-05-07
The entities that hold a legal rights for patent applications filed by inventor Lu Wei:
Wei Lu from Ann Arbor, US has applied for patents for these inventions. The list has both pending applications and granted patents:
BATTERY PARAMETER ESTIMATION USING REDUCED-ORDER AND/OR FULL-ORDER ELECTROCHEMICAL MODELS
#2 | 2026-01-29CHIPLET BASED COMPUTATIONAL ACCELERATORS AND CONFIGURATION METHODS
#3 | 2025-06-12MEMORY PROCESSING UNIT ARCHITECTURES AND CONFIGURATIONS
#4 | 2025-01-30MEMORY PROCESSING UNIT ARCHITECTURE MAPPING TECHNIQUES
#5 | 2025-01-30MEMORY PROCESSING UNIT CORE ARCHITECTURES
#6 | 2025-01-23Accelerator Architecture For A Transformer Machine Learning Model
#7 | 2025-01-02Fast Reduced-Order Electrochemical Models For Lithium-Ion Batteries Under Various Charging And Discharging Rates
#8 | 2024-08-15CORE GROUP MEMORY PROCESSSING CHIP DESIGN
#9 | 2024-08-15CORE GROUP MEMORY PROCESSING WITH MULTI-PRECISION WEIGHT PACKING
#10 | 2024-03-14DIRECT DATAFLOW COMPUTE-IN-MEMORY ACCELERATOR INTERFACE AND ARCHITECTURE
#11 | 2023-11-09Dendrite-Free Lithium Metal Battery by Deformation-Induced Potential Shielding
#12 | 2023-09-28CORE GROUP MEMORY PROCESSSING WITH MAC REUSE
#13 | 2023-08-31CORE GROUP MEMORY PROCESSING WITH GROUP B-FLOAT ENCODING
#14 | 2023-08-17CORE GROUP MEMORY PROCESSSING UNIT ARCHITECTURES AND CONFIGURATIONS
#15 | 2023-03-23Performance of an Electrochemical Cell by Deformation-Induced Local Electric Field
#16 | 2023-03-09Memory processing unit architecture mapping techniques
#17 | 2023-03-09Memory processing unit architectures and configurations
#18 | 2023-03-09MEMORY PROCESSING UNIT CORE ARCHITECTURES
#19 | 2023-03-02Direct Production Of Lithium Hydroxide From Brine By Electrochemical Flow Cells
#20 | 2023-03-02INTER-LAYER COMMUNICATION TECHNIQUES FOR MEMORY PROCESSING UNIT ARCHITECTURES
#21 | 2022-06-16CHIPLET BASED ARTIFICIAL INTELLIGENCE ACCELERATORS AND CONFIGURATION METHODS
#22 | 2022-02-24Matrix multiplication engines
#23 | 2021-10-07Memory processing unit architecture
#24 | 2021-07-08Memory processing unit
#25 | 2021-07-08Methods of joining dissimilar metals without detrimental intermetallic compounds
#26 | 2021-01-14Non-volatile memory based processors and dataflow techniques
#27 | 2021-01-14Matrix Data Reuse Techniques in Processing Systems
#28 | 2020-12-03Memory processing units and methods of computing DOT products including zero bit skipping
#29 | 2020-11-12Memory processing units and methods of computing dot products
#30 | 2020-02-27Techniques for computing dot products with memory devices
#31 | 2019-11-28Memory processing unit
#32 | 2019-05-30Dendrite-free lithium metal battery by deformation-induced potential shielding
#33 | 2019-05-23Sparse coding with memristor networks
#34 | 2018-10-25Sparse coding with Memristor networks
#35 | 2018-04-05Field-programmable crossbar array for reconfigurable computing
#36 | 2017-06-22Device switching using layered device structure
#37 | 2016-01-07Silicon based nanoscale crossbar memory
#38 | 2015-12-10Resistive switching for non volatile memory device using an integrated breakdown element
#39 | 2015-08-18Rectified switching of two-terminal memory via real time filament formation
#40 | 2015-08-13Memory array architecture with two-terminal memory cells
#41 | 2015-08-06High performance lithium battery electrodes by self-assembly processing
#42 | 2015-06-04Schottky diode and method of fabricating the same
#43 | 2015-05-21Silicon based nanoscale crossbar memory
#44 | 2015-04-16Switching device having a non-linear element
#45 | 2015-01-22Device switching using layered device structure
#46 | 2014-08-21Resistive switching for non volatile memory device using an integrated breakdown element
#47 | 2014-06-05SILICON-BASED NANOSCALE RESISTIVE DEVICE WITH ADJUSTABLE RESISTANCE
#48 | 2014-02-27Method and structure of monolithically integrated IC and resistive memory using IC foundry-compatible processes
#49 | 2014-02-06Resistive switching for non volatile memory device using an integrated breakdown element
#50 | 2014-02-06Switching device having a non-linear element
#51 | 2013-12-12Non-volatile solid state resistive switching devices
#52 | 2013-11-21Switching device having a non-linear element
#53 | 2013-11-07Interface control for improved switching in RRAM
#54 | 2013-05-30Resistive memory using SiGe material
#55 | 2012-12-06Switching device having a non-linear element
#56 | 2012-06-28Modeling technique for resistive random access memory (RRAM) cells
#57 | 2012-03-01Silicon based nanoscale crossbar memory
#58 | 2012-02-23Device switching using layered device structure
#59 | 2012-01-12Resistive memory using SiGe material
#60 | 2012-01-12Intrinsic Programming Current Control for a RRAM
#61 | 2012-01-05Nanoscale metal oxide resistive switching element
#62 | 2011-12-29Rectification element and method for resistive switching for non volatile memory device
#63 | 2011-12-15Interface control for improved switching in RRAM
#64 | 2011-01-06NANOSCALE WIRE-BASED MEMORY DEVICES
#65 | 2010-04-29Silicon based nanoscale crossbar memory
#66 | 2010-04-08Silicon-based nanoscale resistive device with adjustable resistance
#67 | 2009-09-10Nanostructures Containing Metal Semiconductor Compounds
#68 | 2009-01-15Non-volatile solid state resistive switching devices
#69 | 2009-01-01Nanostructures Containing Metal Semiconductor Compounds
#70 | 2008-08-14Nanowire heterostructures
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