Osaka
Japan
8
2024-10-03
The entities that hold a legal rights for patent applications filed by inventor NISHIGUCHI Taro:
Taro NISHIGUCHI from Osaka, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#2 | 2024-01-25SILICON CARBIDE EPITAXIAL SUBSTRATE
#3 | 2023-11-16METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE
#4 | 2023-08-31SILICON CARBIDE EPITAXIAL SUBSTRATE
#5 | 2023-08-17SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE
#6 | 2023-02-23SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#7 | 2021-10-21Silicon carbide epitaxial substrate
#8 | 2016-12-01Silicon carbide semiconductor device and method for manufacturing same
5222995 ⎘