Seoul
South Korea
47
2021-06-03
The entities that hold a legal rights for patent applications filed by inventor Horii Hideki:
Hideki Horii from Seoul, KR has applied for patents for these inventions. The list has both pending applications and granted patents:
Variable resistance memory devices implementing two-dimensional transition metal dichalcogenide materials
#2 | 2020-12-10Semiconductor device including data storage material pattern
#3 | 2019-11-21Methods of forming semiconductor devices having threshold switching devices
#4 | 2019-06-20Variable resistance memory device and method of manufacturing the same
#5 | 2019-05-16Memory device
#6 | 2018-09-27Memory device including a variable resistance material layer
#7 | 2018-02-15Variable resistance memory device and method of manufacturing the same
#8 | 2018-02-08Method of forming semiconductor devices having threshold switching devices
#9 | 2018-02-01Variable resistance memory device and method of manufacturing the same
#10 | 2018-01-25Memory device
#11 | 2017-10-05Variable resistance memory devices
#12 | 2017-08-31Variable resistance memory devices
#13 | 2017-08-24VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
#14 | 2017-02-23Semiconductor device and method of fabricating the same
#15 | 2016-02-25Semiconductor device and method of fabricating the same
#16 | 2015-12-17Method of manufacturing a phase change memory device
#17 | 2014-01-23Variable resistance memory device and method of forming the same
#18 | 2013-11-14VARIABLE RESISTANCE MEMORY DEVICE AND METHODS OF FORMING THE SAME
#19 | 2012-06-14Method of manufacturing variable resistance memory device
#20 | 2012-06-07Method of forming resistance variable memory device
#21 | 2011-12-08Methods for fabricating phase change memory devices
#22 | 2011-06-30VARIABLE RESISTANCE MEMORY DEVICE AND METHODS OF FORMING THE SAME
#23 | 2011-06-23Variable resistance memory device and method of forming the same
#24 | 2011-05-26Probe card and test apparatus including the same
#25 | 2011-03-03Non-volatile memory device including phase-change material
#26 | 2011-03-03Non-volatile memory device including phase-change material
#27 | 2010-04-01Methods of manufacturing semiconductor device
#28 | 2010-03-04Phase changeable memory cell array region and method of forming the same
#29 | 2009-03-19Multi-level phase change memory device, program method thereof, and method and system including the same
#30 | 2009-02-26Resistance variable memory device and operating method thereof
#31 | 2009-02-26Resistance variable memory device and programming method thereof
#32 | 2008-11-06Phase changeable memory device structures
#33 | 2008-10-02Phase change memory device and method of fabricating the same
#34 | 2008-07-24Phase change memory devices including carbon-containing adhesive pattern
#35 | 2008-04-24Phase change memory device and method of forming the same
#36 | 2008-03-20Phase change memory devices including memory cells having different phase change materials and related methods and systems
#37 | 2008-03-13Methods of forming semiconductor devices using di-block polymer layers
#38 | 2008-02-28SEMICONDUCTOR DEVICE HAVING HEATING STRUCTURE AND METHOD OF FORMING THE SAME
#39 | 2007-12-13Reflowing of a phase changeable memory element to close voids therein
#40 | 2007-08-16Phase changeable structure and method of forming the same
#41 | 2007-05-17Phase changeable memory cell array region and method of forming the same
#42 | 2006-11-30System and method of determining pulse properties of semiconductor device
#43 | 2006-07-06Phase changable memory device structures
#44 | 2006-06-13Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method
#45 | 2006-05-02Methods for forming phase changeable memory devices
#46 | 2006-03-02Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured
#47 | 2006-02-02Laser reflowing of phase changeable memory element to close a void therein
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