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Inventor profile of:

Natsuko Aota

City:

Tokyo

Country:

Japan

Published Applications:

Last publication date:

2016-09-15

Top Assignees for applications by Natsuko Aota

The entities that hold a legal rights for patent applications filed by inventor Aota Natsuko:

DISCO CORPORATION 7 Tokyo, Japan
NAMIKI SEIMITSU HOUSEKI KABUSHIKI KAISHA 6 Tokyo, Japan
NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA 3 Tokyo, Japan
NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA 2 Adachi-ku, Tokyo, Japan
DISCO CORPORATION 2 Ota-ku, Tokyo, Japan
NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA 1 , Japan
Disco Corporation 1 , Japan
Namiki Seimitsu Houseki Kabushiki Kaisha 1 , Japan
TORAY INDUSTRIES, INC 1 Tokyo, Japan

Recent patent applications by Aota Natsuko

Natsuko Aota from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-09-15

US20160265140A1

Chemistry; metallurgy

SINGLE CRYSTAL SUBSTRATE, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND ELEMENT MANUFACTURING METHOD

#2 | 2016-08-04

US20160225942A1

Electricity

SUBSTRATE AND METHOD FOR MANUFACTURING SAME, LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME, AND DEVICE HAVING SUBSTRATE OR LIGHT-EMITTING ELEMENT

#3 | 2015-12-24

US20150368832A1

Chemistry; metallurgy

GaN SUBSTRATE, AND METHOD FOR MANUFACTURING GaN SUBSTRATE

#4 | 2015-03-19

US20150076662A1

Electricity

Composite substrate manufacturing method, semiconductor element manufacturing method, composite substrate, and semiconductor element

#5 | 2014-08-07

US20140217458A1

Electricity

Method for manufacturing light-emitting element, and light-emitting element

#6 | 2013-06-27

US20130161797A1

Electricity

SINGLE CRYSTAL SUBSTRATE, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND ELEMENT MANUFACTURING METHOD

#7 | 2013-06-27

US20130161794A1

Electricity

INTERNALLY REFORMED SUBSTRATE FOR EPITAXIAL GROWTH, INTERNALLY REFORMED SUBSTRATE WITH MULTILAYER FILM, SEMICONDUCTOR DEVICE, BULK SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHODS THEREFOR

#8 | 2013-04-04

US20130082358A1

Electricity

SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND ELEMENT MANUFACTURING METHOD

#9 | 2013-03-14

US20130062734A1

Electricity

CRYSTALLINE FILM, DEVICE, AND MANUFACTURING METHODS FOR CRYSTALLINE FILM AND DEVICE

#10 | 2013-01-24

US20130022773A1

Electricity

Single-crystal substrate,single-crystal substrate having crystalline film,crystalline film,method for producing single-crystal substrate having crystalline film,method for producing crystalline substrate,and method for producing element

#11 | 2012-01-26

US20120018732A1

Chemistry; metallurgy

INSIDE REFORMING SUBSTRATE FOR EPITAXIAL GROWTH; CRYSTAL FILM FORMING ELEMENT, DEVICE, AND BULK SUBSTRATE PRODUCED USING THE SAME; AND METHOD FOR PRODUCING THE SAME

InventorID:

52880 ⎘