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Inventor profile of:

David J. Lee

City:

Poughkeepsie, New York

Country:

United States

Published Applications:

8

Last publication date:

2024-12-12

Top Assignees for applications by David J. Lee

The entities that hold a legal rights for patent applications filed by inventor Lee David J.:

  • Applied Materials, Inc. 8 Santa Clara, CA United States

Recent patent applications by Lee David J.

David J. Lee from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-12-12
US20240411085A1
Physics

SELECTIVE WAVEGUIDE ION IMPLANTATION TO ADJUST LOCAL REFRACTIVE INDEX FOR PHOTONICS

#2 | 2024-08-01
US20240255700A1
Physics

SURFACE ROUGHNESS REDUCTION FOR PHOTONICS USING HIGH-TEMPERATURE IMPLANTATION

#3 | 2024-04-18
US20240128131A1
Electricity

ENDPOINT OPTIMIZATION FOR SEMICONDUCTOR PROCESSES

#4 | 2022-12-29
US20220415656A1
Electricity

Backside wafer dopant activation

#5 | 2022-10-27
US20220344453A1
Electricity

Self-aligned trench MOSFET

#6 | 2022-06-23
US20220199806A1
Electricity

Ion implantation to form trench-bottom oxide of MOSFET

#7 | 2022-05-26
US20220165863A1
Electricity

Split-gate MOSFET with gate shield

#8 | 2022-02-10
US20220044939A1
Electricity

Method for increasing photoresist etch selectivity to enable high energy hot implant in SiC devices

InventorID:

5323196 ⎘

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