Munich
Germany
33
2023-12-07
The entities that hold a legal rights for patent applications filed by inventor Voss Stephan:
Stephan Voss from Munich, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer
#2 | 2022-12-01Semiconductor device with improved performance in operation and improved flexibility in the arrangement of power chips
#3 | 2022-11-10Method for Processing a Semiconductor Wafer and Semiconductor Composite Structure
#4 | 2022-06-23Semiconductor device protection using an anti-reflective layer
#5 | 2022-02-03Methods for forming a semiconductor device
#6 | 2021-12-09Semiconductor package with signal distribution element
#7 | 2019-11-28Method for processing a semiconductor wafer, semiconductor composite structure and support structure for semiconductor wafer
#8 | 2019-05-30Method of manufacturing a semiconductor device comprising first and second field stop zone portions
#9 | 2018-07-05Semiconductor device comprising a clamping structure
#10 | 2018-06-07Bipolar transistor with superjunction structure
#11 | 2018-03-29Semiconductor device and method for forming a semiconductor device
#12 | 2017-07-06Method of making a semiconductor device formed by thermal annealing
#13 | 2017-05-18Power device with overvoltage arrester
#14 | 2017-05-04Semiconductor device
#15 | 2017-05-04Insulated gate semiconductor device with soft switching behavior
#16 | 2017-04-27Bipolar transistor with superjunction structure
#17 | 2017-01-26Semiconductor device with a reduced band gap zone
#18 | 2017-01-19Semiconductor device comprising a clamping structure
#19 | 2016-10-20Ion implantation apparatus with ion beam directing unit
#20 | 2016-10-06Semiconductor device with channelstopper and method for producing the same
#21 | 2016-04-21Insulated gate bipolar transistor comprising negative temperature coefficient thermistor
#22 | 2015-12-24Method for treating a semiconductor wafer
#23 | 2015-09-24Semiconductor device including at least one type of deep-level dopant
#24 | 2015-08-13Transistor device with integrated gate-resistor
#25 | 2015-08-13Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing
#26 | 2015-02-12Edge termination structure with trench isolation regions
#27 | 2015-01-29Semiconductor device
#28 | 2015-01-29Power MOS transistor with integrated gate-resistor
#29 | 2014-10-02Insulated gate bipolar transistor including emitter short regions
#30 | 2013-11-21Semiconductor device including first and second semiconductor materials
#31 | 2011-08-25Semiconductor device with a field stop zone and process of producing the same
#32 | 2010-06-24Semiconductor device with staggered oxide-filled trenches at edge region
#33 | 2008-03-06Semiconductor device with a field stop zone and process of producing the same
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