Inventor profile of:

Stephan Voss

City:

Munich

Country:

Germany

Published Applications:

33

Last publication date:

2023-12-07

Top Assignees for applications by Stephan Voss

The entities that hold a legal rights for patent applications filed by inventor Voss Stephan:

Recent patent applications by Voss Stephan

Stephan Voss from Munich, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-12-07
US20230395394A1
Electricity

Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer

#2 | 2022-12-01
US20220384305A1
Electricity

Semiconductor device with improved performance in operation and improved flexibility in the arrangement of power chips

#3 | 2022-11-10
US20220359428A1
Electricity

Method for Processing a Semiconductor Wafer and Semiconductor Composite Structure

#4 | 2022-06-23
US20220199464A1
Electricity

Semiconductor device protection using an anti-reflective layer

#5 | 2022-02-03
US20220037165A1
Electricity

Methods for forming a semiconductor device

#6 | 2021-12-09
US20210384111A1
Electricity

Semiconductor package with signal distribution element

#7 | 2019-11-28
US20190363057A1
Electricity

Method for processing a semiconductor wafer, semiconductor composite structure and support structure for semiconductor wafer

#8 | 2019-05-30
US20190165090A1
Electricity

Method of manufacturing a semiconductor device comprising first and second field stop zone portions

#9 | 2018-07-05
US20180190641A1
Electricity

Semiconductor device comprising a clamping structure

#10 | 2018-06-07
US20180158937A1
Electricity

Bipolar transistor with superjunction structure

#11 | 2018-03-29
US20180090565A1
Electricity

Semiconductor device and method for forming a semiconductor device

#12 | 2017-07-06
US20170194148A1
Electricity

Method of making a semiconductor device formed by thermal annealing

#13 | 2017-05-18
US20170141567A1
Electricity

Power device with overvoltage arrester

#14 | 2017-05-04
US20170125560A1
Electricity

Semiconductor device

#15 | 2017-05-04
US20170125407A1
Electricity

Insulated gate semiconductor device with soft switching behavior

#16 | 2017-04-27
US20170117394A1
Electricity

Bipolar transistor with superjunction structure

#17 | 2017-01-26
US20170025408A1
Electricity

Semiconductor device with a reduced band gap zone

#18 | 2017-01-19
US20170018544A1
Electricity

Semiconductor device comprising a clamping structure

#19 | 2016-10-20
US20160305012A1
Chemistry; metallurgy

Ion implantation apparatus with ion beam directing unit

#20 | 2016-10-06
US20160293691A1
Electricity

Semiconductor device with channelstopper and method for producing the same

#21 | 2016-04-21
US20160111415A1
Electricity

Insulated gate bipolar transistor comprising negative temperature coefficient thermistor

#22 | 2015-12-24
US20150371858A1
Electricity

Method for treating a semiconductor wafer

#23 | 2015-09-24
US20150270347A1
Electricity

Semiconductor device including at least one type of deep-level dopant

#24 | 2015-08-13
US20150228744A1
Electricity

Transistor device with integrated gate-resistor

#25 | 2015-08-13
US20150228446A1
Electricity

Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing

#26 | 2015-02-12
US20150041946A1
Electricity

Edge termination structure with trench isolation regions

#27 | 2015-01-29
US20150028412A1
Electricity

Semiconductor device

#28 | 2015-01-29
US20150028383A1
Electricity

Power MOS transistor with integrated gate-resistor

#29 | 2014-10-02
US20140291724A1
Electricity

Insulated gate bipolar transistor including emitter short regions

#30 | 2013-11-21
US20130307018A1
Electricity

Semiconductor device including first and second semiconductor materials

#31 | 2011-08-25
US20110207310A1
Electricity

Semiconductor device with a field stop zone and process of producing the same

#32 | 2010-06-24
US20100155879A1
Electricity

Semiconductor device with staggered oxide-filled trenches at edge region

#33 | 2008-03-06
US20080054369A1
Electricity

Semiconductor device with a field stop zone and process of producing the same

InventorID:

535339 ⎘