Beijing
China
20
2026-03-05
The entities that hold a legal rights for patent applications filed by inventor Fu Jun:
Jun Fu from Beijing, CN has applied for patents for these inventions. The list has both pending applications and granted patents:
SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
#2 | 2025-08-07METHOD AND SYSTEM OF CALIBRATION FOR MULTI-LIDAR AND INTEGRATED-NAVIGATION
#3 | 2025-04-24COMMUNICATION DEVICE
#4 | 2025-02-20COVER AND A CAVITY FILTER COMPRISING THE SAME
#5 | 2025-01-02TRIPLE-MODE RESONATOR AND WAVEGUIDE FILTER COMPRISING THE SAME
#6 | 2024-11-21Dielectric Cavity Resonator and a Dielectric Cavity Filter having the Same
#7 | 2024-08-08INTEGRATED LOW-PASS AND BAND-PASS FILTER UNIT FORMED BY SHEET METAL COATED WITH DIELECTRIC MATERIAL
#8 | 2024-06-20Process For Producing Deformed Nonwoven
#9 | 2022-08-25RESONATOR APPARATUS, FILTER APPARATUS AS WELL AS RADIO FREQUENCY AND MICROWAVE DEVICE
#10 | 2021-10-21Process For Producing Deformed Nonwoven
#11 | 2018-01-11CURSOR OPERATION METHOD AND DEVICE FOR INPUT METHOD
#12 | 2017-10-05General four-port on-wafer high frequency de-embedding method
#13 | 2015-04-30Photoelectric-type continuous liquid level measurement method and device
#14 | 2014-11-13Method of removing sulfur oxides and nitrogen oxides in the flue gas
#15 | 2014-11-06Bipolar transistor with embedded epitaxial external base region and method of forming the same
#16 | 2014-06-26Metal silicide self-aligned SiGe heterojunction bipolar transistor and method of forming the same
#17 | 2013-11-28METAL SILICIDE SELF-ALIGNED SiGe HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME
#18 | 2013-11-21BIPOLAR TRANSISTOR WITH EMBEDDED EPITAXIAL EXTERNAL BASE REGION AND METHOD OF FORMING THE SAME
#19 | 2012-10-11Humidity measurement device and method
#20 | 2008-12-11Transistor manufacture
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