Inventor profile of:

Jun Fu

City:

Beijing

Country:

China

Published Applications:

20

Last publication date:

2026-03-05

Top Assignees for applications by Jun Fu

The entities that hold a legal rights for patent applications filed by inventor Fu Jun:

Recent patent applications by Fu Jun

Jun Fu from Beijing, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-03-05
US20260068199A1
Electricity

SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

#2 | 2025-08-07
US20250251499A1
Physics

METHOD AND SYSTEM OF CALIBRATION FOR MULTI-LIDAR AND INTEGRATED-NAVIGATION

#3 | 2025-04-24
US20250132480A1
Electricity

COMMUNICATION DEVICE

#4 | 2025-02-20
US20250062517A1
Electricity

COVER AND A CAVITY FILTER COMPRISING THE SAME

#5 | 2025-01-02
US20250007140A1
Electricity

TRIPLE-MODE RESONATOR AND WAVEGUIDE FILTER COMPRISING THE SAME

#6 | 2024-11-21
US20240387970A1
Electricity

Dielectric Cavity Resonator and a Dielectric Cavity Filter having the Same

#7 | 2024-08-08
US20240267029A1
Electricity

INTEGRATED LOW-PASS AND BAND-PASS FILTER UNIT FORMED BY SHEET METAL COATED WITH DIELECTRIC MATERIAL

#8 | 2024-06-20
US20240200247A9
Textiles; paper

Process For Producing Deformed Nonwoven

#9 | 2022-08-25
US20220271410A1
Electricity

RESONATOR APPARATUS, FILTER APPARATUS AS WELL AS RADIO FREQUENCY AND MICROWAVE DEVICE

#10 | 2021-10-21
US20210324557A1
Textiles; paper

Process For Producing Deformed Nonwoven

#11 | 2018-01-11
US20180011549A1
Physics

CURSOR OPERATION METHOD AND DEVICE FOR INPUT METHOD

#12 | 2017-10-05
US20170287792A1
Electricity

General four-port on-wafer high frequency de-embedding method

#13 | 2015-04-30
US20150115158A1
Physics

Photoelectric-type continuous liquid level measurement method and device

#14 | 2014-11-13
US20140335005A1
Performing operations; transporting

Method of removing sulfur oxides and nitrogen oxides in the flue gas

#15 | 2014-11-06
US20140329368A1
Electricity

Bipolar transistor with embedded epitaxial external base region and method of forming the same

#16 | 2014-06-26
US20140175520A1
Electricity

Metal silicide self-aligned SiGe heterojunction bipolar transistor and method of forming the same

#17 | 2013-11-28
US20130313614A1
Electricity

METAL SILICIDE SELF-ALIGNED SiGe HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME

#18 | 2013-11-21
US20130307122A1
Electricity

BIPOLAR TRANSISTOR WITH EMBEDDED EPITAXIAL EXTERNAL BASE REGION AND METHOD OF FORMING THE SAME

#19 | 2012-10-11
US20120255354A1
Physics

Humidity measurement device and method

#20 | 2008-12-11
US20080305602A1
Electricity

Transistor manufacture

InventorID:

535433 ⎘