Dresden
Germany
18
2022-04-07
The entities that hold a legal rights for patent applications filed by inventor Eichler Stefan:
Stefan Eichler from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations
#2 | 2022-01-27Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity
#3 | 2019-05-30Method and apparatus for Ga-recovery
#4 | 2018-06-07Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity
#5 | 2015-12-24Process for producing a gallium arsenide substrate which includes marangoni drying
#6 | 2014-04-17Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal
#7 | 2013-12-05Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
#8 | 2012-01-26Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
#9 | 2010-05-27Device and process for producing poly-crystalline or multi-crystalline silicon; ingot as well as wafer of poly-crystalline or multi-crystalline silicon produced thereby, and use for the manufacture of solar cells
#10 | 2010-01-14Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
#11 | 2009-04-23Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
#12 | 2008-12-18Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal
#13 | 2008-09-04Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
#14 | 2008-08-28Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
#15 | 2007-11-08Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate
#16 | 2007-06-21PROCESS FOR PRODUCING A FREE-STANDING III-N LAYER, AND FREE-STANDING III-N SUBSTRATE
#17 | 2007-01-18Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
#18 | 2007-01-18Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
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