Inventor profile of:

Peter G. Tolchinsky

City:

Beaverton, Oregon

Country:

United States

Published Applications:

28

Last publication date:

2019-09-12

Top Assignees for applications by Peter G. Tolchinsky

The entities that hold a legal rights for patent applications filed by inventor Tolchinsky Peter G.:

Recent patent applications by Tolchinsky Peter G.

Peter G. Tolchinsky from Beaverton, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-09-12
US20190279908A1
Electricity

Techniques for monolithic co-integration of silicon and III-N semiconductor transistors

#2 | 2019-02-14
US20190051650A1
Electricity

Silicon PMOS with gallium nitride NMOS for voltage regulation

#3 | 2018-05-24
US20180145052A1
Electricity

GaN devices on engineered silicon substrates

#4 | 2016-05-12
US20160133735A1
Electricity

Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition

#5 | 2014-07-24
US20140203326A1
Electricity

Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby

#6 | 2013-12-05
US20130320294A1
Electricity

Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition

#7 | 2012-06-07
US20120142166A1
Electricity

Stacking fault and twin blocking barrier for integrating III-V on Si

#8 | 2010-12-30
US20100327261A1
Electricity

High hole mobility p-channel Ge transistor structure on Si substrate

#9 | 2010-06-24
US20100155880A1
Electricity

Back gate doping for SOI substrates

#10 | 2010-06-17
US20100148153A1
Electricity

Group III-V devices with delta-doped layer under channel region

#11 | 2009-12-24
US20090315018A1
Electricity

Methods of forming buffer layer architecture on silicon and structures formed thereby

#12 | 2009-09-03
US20090218596A1
Electricity

Buffer layers for device isolation of devices grown on silicon

#13 | 2009-08-20
US20090206324A1
Electricity

Dislocation removal from a group III-V film grown on a semiconductor substrate

#14 | 2009-04-16
US20090096025A1
Electricity

Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer

#15 | 2009-03-19
US20090071918A1
Electricity

VERTICAL SEMICONDUCTOR WAFER CARRIER

#16 | 2009-03-05
US20090057648A1
Electricity

High hole mobility p-channel Ge transistor structure on Si substrate

#17 | 2008-03-27
US20080076235A1
Electricity

Buffer layers for device isolation of devices grown on silicon

#18 | 2008-03-27
US20080073639A1
Electricity

Dislocation-free InSb quantum well structure on Si using novel buffer architecture

#19 | 2008-02-07
US20080032478A1
Electricity

Stacking fault and twin blocking barrier for integrating III-V on Si

#20 | 2007-10-11
US20070238281A1
Electricity

Depositing polar materials on non-polar semiconductor substrates

#21 | 2007-03-22
US20070063279A1
Electricity

Insulation layer for silicon-on-insulator wafer

#22 | 2006-06-29
US20060138627A1
Electricity

Methods of vertically stacking wafers using porous silicon

#23 | 2006-05-18
US20060102988A1
Electricity

Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer

#24 | 2005-12-29
US20050285212A1
Electricity

Transistors with increased mobility in the channel zone and method of fabrication

#25 | 2005-10-06
US20050217560A1
Electricity

Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same

#26 | 2005-08-02
US10463766
-

Method for making a semiconductor device having increased carrier mobility

#27 | 2005-06-28
US10199123
-

Method of forming silicon on insulator wafers

#28 | 2005-03-31
US20050070048A1
Electricity

Devices and methods employing high thermal conductivity heat dissipation substrates

InventorID:

553802 ⎘