Beaverton, Oregon
United States
28
2019-09-12
The entities that hold a legal rights for patent applications filed by inventor Tolchinsky Peter G.:
Peter G. Tolchinsky from Beaverton, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Techniques for monolithic co-integration of silicon and III-N semiconductor transistors
#2 | 2019-02-14Silicon PMOS with gallium nitride NMOS for voltage regulation
#3 | 2018-05-24GaN devices on engineered silicon substrates
#4 | 2016-05-12Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition
#5 | 2014-07-24Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby
#6 | 2013-12-05Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition
#7 | 2012-06-07Stacking fault and twin blocking barrier for integrating III-V on Si
#8 | 2010-12-30High hole mobility p-channel Ge transistor structure on Si substrate
#9 | 2010-06-24Back gate doping for SOI substrates
#10 | 2010-06-17Group III-V devices with delta-doped layer under channel region
#11 | 2009-12-24Methods of forming buffer layer architecture on silicon and structures formed thereby
#12 | 2009-09-03Buffer layers for device isolation of devices grown on silicon
#13 | 2009-08-20Dislocation removal from a group III-V film grown on a semiconductor substrate
#14 | 2009-04-16Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer
#15 | 2009-03-19VERTICAL SEMICONDUCTOR WAFER CARRIER
#16 | 2009-03-05High hole mobility p-channel Ge transistor structure on Si substrate
#17 | 2008-03-27Buffer layers for device isolation of devices grown on silicon
#18 | 2008-03-27Dislocation-free InSb quantum well structure on Si using novel buffer architecture
#19 | 2008-02-07Stacking fault and twin blocking barrier for integrating III-V on Si
#20 | 2007-10-11Depositing polar materials on non-polar semiconductor substrates
#21 | 2007-03-22Insulation layer for silicon-on-insulator wafer
#22 | 2006-06-29Methods of vertically stacking wafers using porous silicon
#23 | 2006-05-18Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer
#24 | 2005-12-29Transistors with increased mobility in the channel zone and method of fabrication
#25 | 2005-10-06Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same
#26 | 2005-08-02Method for making a semiconductor device having increased carrier mobility
#27 | 2005-06-28Method of forming silicon on insulator wafers
#28 | 2005-03-31Devices and methods employing high thermal conductivity heat dissipation substrates
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