Inventor profile of:

Hidehiro Kojiri

City:

Sunnyvale, California

Country:

United States

Published Applications:

15

Last publication date:

2020-07-16

Top Assignees for applications by Hidehiro Kojiri

The entities that hold a legal rights for patent applications filed by inventor Kojiri Hidehiro:

Recent patent applications by Kojiri Hidehiro

Hidehiro Kojiri from Sunnyvale, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-07-16
US20200227258A1
Electricity

Method of forming film stacks with reduced defects

#2 | 2017-07-20
US20170207069A1
Electricity

RPS defect reduction by cyclic clean induced RPS cooling

#3 | 2013-12-05
US20130320353A1
Electricity

Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)

#4 | 2012-11-22
US20120295428A1
Electricity

Methods for pretreatment of group III-nitride depositions

#5 | 2012-11-22
US20120295418A1
Electricity

Methods for improved growth of group III nitride buffer layers

#6 | 2012-11-22
US20120291698A1
Chemistry; metallurgy

Methods for improved growth of group III nitride semiconductor compounds

#7 | 2012-09-20
US20120235116A1
Electricity

LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION

#8 | 2012-06-21
US20120156863A1
Electricity

SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS

#9 | 2011-10-27
US20110263111A1
Electricity

GROUP III-NITRIDE N-TYPE DOPING

#10 | 2011-06-16
US20110140071A1
Chemistry; metallurgy

NANO-SPHERICAL GROUP III-NITRIDE MATERIALS

#11 | 2011-01-20
US20110012109A1
Electricity

Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)

#12 | 2010-11-04
US20100279020A1
Chemistry; metallurgy

METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE

#13 | 2010-10-28
US20100273318A1
Electricity

Substrate pretreatment for subsequent high temperature group III depositions

#14 | 2010-02-04
US20100024840A1
Performing operations; transporting

CHAMBER PLASMA-CLEANING PROCESS SCHEME

#15 | 2009-05-07
US20090114245A1
Chemistry; metallurgy

IN-SITU CHAMBER CLEANING METHOD

InventorID:

553874 ⎘