Inventor profile of:

Josef Lutz

City:

Chemnitz

Country:

Germany

Published Applications:

14

Last publication date:

2019-06-27

Top Assignees for applications by Josef Lutz

The entities that hold a legal rights for patent applications filed by inventor Lutz Josef:

Recent patent applications by Lutz Josef

Josef Lutz from Chemnitz, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-06-27
US20190198621A1
Electricity

Wide band gap semiconductor device and a method for forming a wide band gap semiconductor device

#2 | 2018-03-01
US20180061971A1
Electricity

Transistor device with high current robustness

#3 | 2017-11-23
US20170338193A1
Electricity

POWER SEMICONDUCTOR MODULE WITH SHORT-CIRCUIT FAILURE MODE

#4 | 2016-06-16
US20160172352A1
Electricity

Power semiconductor device with improved stability and method for producing the same

#5 | 2014-11-06
US20140327114A1
Electricity

Semiconductor component with optimized edge termination

#6 | 2014-09-18
US20140264376A1
Electricity

Power switching module with reduced oscillation

#7 | 2013-12-05
US20130320500A1
Electricity

Bipolar semiconductor component with a fully depletable channel zone

#8 | 2012-01-26
US20120018846A1
Electricity

Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode

#9 | 2010-07-01
US20100167509A1
Electricity

Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component

#10 | 2008-06-05
US20080128798A1
Electricity

Semiconductor component with improved robustness

#11 | 2007-12-06
US20070278514A1
Electricity

Semiconductor component comprising a temporary field stopping area, and method for the production thereof

#12 | 2007-07-26
US20070170514A1
Electricity

IGBT device and related device having robustness under extreme conditions

#13 | 2006-03-02
US20060043470A1
Electricity

Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component

#14 | 2005-07-28
US20050161746A1
Electricity

Semiconductor diode and IGBT

InventorID:

554067 ⎘