Inventor profile of:

Robin Davis

City:

Vancouver, Washington

Country:

United States

Published Applications:

24

Last publication date:

2026-04-09

Top Assignees for applications by Robin Davis

The entities that hold a legal rights for patent applications filed by inventor Davis Robin:

Recent patent applications by Davis Robin

Robin Davis from Vancouver, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-04-09
US20260101777A1
Electricity

MOLDED LAYERED BRIDGE AND METHOD OF MAKING THE SAME

#2 | 2026-03-05
US20260068721A1
Electricity

3D BLOCK ATTACHED TO A SUBSTRATE IN A SEMICONDUCTOR PACKAGE

#3 | 2026-02-05
US20260040919A1
Electricity

FULLY MOLDED SEMICONDUCTOR STRUCTURE WITH THROUGH SILICON VIA (TSV) VERTICAL INTERCONNECTS

#4 | 2026-01-08
US20260011574A1
Electricity

INTERCONNECT SUBSTRATE AND METHOD OF MAKING

#5 | 2025-09-04
US20250279382A1
Electricity

QUAD FLAT NO-LEAD (QFN) PACKAGE WITH TIE BARS AND DIRECT CONTACT INTERCONNECT BUILD-UP STRUCTURE AND METHOD FOR MAKING THE SAME

#6 | 2025-08-28
US20250273526A1
Electricity

FULLY MOLDED STRUCTURE WITH MULTI-HEIGHT COMPONENTS COMPRISING BACKSIDE CONDUCTIVE MATERIAL AND METHOD FOR MAKING THE SAME

#7 | 2025-05-29
US20250174542A1
Electricity

SEMICONDUCTOR ASSEMBLY COMPRISING A 3D BLOCK AND METHOD OF MAKING THE SAME

#8 | 2025-04-03
US20250112141A1
Electricity

QUAD FLAT NO-LEAD (QFN) PACKAGE WITHOUT LEADFRAME AND WITH LAYER OF DIELECTRIC

#9 | 2024-12-19
US20240421017A1
Electricity

Fully molded structure with multi-height components comprising backside conductive material and method for making the same

#10 | 2024-12-05
US20240404840A1
Electricity

MOLDED DIRECT CONTACT INTERCONNECT SUBSTRATE AND METHODS OF MAKING SAME

#11 | 2024-11-28
US20240395673A1
Electricity

STACKABLE FULLY MOLDED SEMICONDUCTOR STRUCTURE WITH THROUGH VERTICAL INTERCONNECTS

#12 | 2024-07-18
US20240243089A1
Electricity

LAYERED MOLDED DIRECT CONTACT AND DIELECTRIC STRUCTURE AND METHOD FOR MAKING THE SAME

#13 | 2024-06-27
US20240213202A1
Electricity

ENCAPSULANT-DEFINED LAND GRID ARRAY (LGA) PACKAGE AND METHOD FOR MAKING THE SAME

#14 | 2024-06-27
US20240213135A1
Electricity

Semiconductor assembly comprising a 3D block and method of making the same

#15 | 2024-01-25
US20240030174A1
Electricity

QUAD FLAT NO-LEAD (QFN) PACKAGE WITH BACKSIDE CONDUCTIVE MATERIAL AND DIRECT CONTACT INTERCONNECT BUILD-UP STRUCTURE AND METHOD FOR MAKING THE SAME

#16 | 2024-01-25
US20240030113A1
Electricity

QUAD FLAT NO-LEAD (QFN) PACKAGE WITHOUT LEADFRAME AND DIRECT CONTACT INTERCONNECT BUILD-UP STRUCTURE

#17 | 2023-12-21
US20230411333A1
Electricity

Molded direct contact interconnect structure without capture pads and method for the same

#18 | 2023-11-30
US20230387060A1
Electricity

Molded direct contact interconnect structure without capture pads and method for the same

#19 | 2023-11-30
US20230386860A1
Electricity

Molded direct contact interconnect substrate and methods of making same

#20 | 2023-11-23
US20230378029A1
Electricity

FULLY MOLDED SEMICONDUCTOR STRUCTURE WITH THROUGH SILICON VIA (TSV) VERTICAL INTERCONNECTS

#21 | 2023-09-05
US17957683
Electricity

Quad flat no-lead (QFN) package without leadframe and direct contact interconnect build-up structure and method for making the same

#22 | 2023-07-27
US20230238304A1
Electricity

Stackable fully molded semiconductor structure with through silicon via (TSV) vertical interconnects and method of making the same

#23 | 2023-01-05
US20230005820A1
Electricity

Fully molded semiconductor structure with through silicon via (TSV) vertical interconnects

#24 | 2023-01-05
US20230005819A1
Electricity

Stackable fully molded semiconductor structure with through silicon via (TSV) vertical interconnects

InventorID:

5625475 ⎘