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Inventor profile of:

Hiroshi Amano

City:

Aichi

Country:

Japan

Published Applications:

15

Last publication date:

2024-02-29

Top Assignees for applications by Hiroshi Amano

The entities that hold a legal rights for patent applications filed by inventor Amano Hiroshi:

SUMCO CORPORATION 4 Tokyo, Japan
SOKO KAGAKU CO., LTD. 3 Aichi, Japan
MEIJO UNIVERSITY 2 Nagoya-shi, Aichi, Japan
JAPAN SCIENCE AND TECHNOLOGY AGENCY 1 Kawaguchi, Japan
NATIONAL INSTITUTE FOR MATERIALS SCIENCE 1 Ibaraki, Japan
SHOWA DENKO K.K. 1 Tokyo, Japan
EL-SEED Corporation 1 Aichi, Japan
MEIJO UNIVERSITY 1 Aichi, Japan
KYOCERA CORPORATION 1 Kyoto, Japan
TOKUYAMA CORPORATION 1 Shunan-shi, Yamaguchi, Japan
TOKUYAMA CORPORATION 1 Shunan-shi, Japan
MEIJO UNIVERSITY 1 Nagoya-shi, Japan
UV Craftory Co., Ltd. 1 Aichi, Japan
EL-SEED CORPORATION 1 Nagoya-shi, Aichi, Japan

Recent patent applications by Amano Hiroshi

Hiroshi Amano from Aichi, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-02-29

US20240071756A1

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

#2 | 2021-07-08

US20210210340A1

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

#3 | 2021-05-20

US20210151314A1

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

#4 | 2018-11-22

US20180337306A1

Manufacturing method for group III nitride semiconductor substrate and group III nitride semiconductor substrate

#5 | 2016-11-03

US20160319459A1

Chemistry; metallurgy

METHOD FOR PRODUCING A TEMPLATE FOR EPITAXIAL GROWTH HAVING A SAPPHIRE (0001) SUBSTRATE, AN INITIAL-STAGE AlN LAYER AND LATERALLY OVERGROWN AlxGayN (0001) LAYER

#6 | 2013-12-12

US20130330913A1

Method for manufacturing semiconductor device

#7 | 2012-10-11

US20120258286A1

Chemistry; metallurgy

Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layer

#8 | 2012-09-13

US20120228656A1

Semiconductor light emitting element

#9 | 2012-02-16

US20120037923A1

Light emitting diode element with porous SiC emitting by donor acceptor pair

#10 | 2011-10-20

US20110254048A1

Chemistry; metallurgy

GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE

#11 | 2010-10-07

US20100255304A1

Chemistry; metallurgy

Aluminum nitride single crystal forming polygonal columns and a process for producing a plate-shaped aluminum nitride single crystal using the same

#12 | 2007-01-11

US20070008539A1

Filter function-equipped optical sensor and flame sensor

#13 | 2006-05-18

US20060102924A1

Diboride single crystal substrate, semiconductor device using this and its manufacturing method

#14 | 2005-03-31

US20050066885A1

Chemistry; metallurgy

Group III-nitride semiconductor substrate and its manufacturing method

#15 | 2005-02-17

US20050037526A1

Nitride semiconductor substrate production method thereof and semiconductor optical device using the same

InventorID:

567912 ⎘