Inventor profile of:

Dai Ishikawa

City:

Tokyo

Country:

Japan

Published Applications:

43

Last publication date:

2025-05-22

Top Assignees for applications by Dai Ishikawa

The entities that hold a legal rights for patent applications filed by inventor Ishikawa Dai:

Recent patent applications by Ishikawa Dai

Dai Ishikawa from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-05-22
US20250162026A1
Performing operations; transporting

COPPER PASTE, WICK FORMATION METHOD, AND HEAT PIPE

#2 | 2024-12-26
US20240424614A1
Performing operations; transporting

METAL PASTE FOR BONDING, AND BONDED BODY AND METHOD FOR PRODUCING SAME

#3 | 2024-09-12
US20240300055A1
Performing operations; transporting

METAL PASTE FOR JOINING, JOINT, AND MANUFACTURING METHOD THEREFOR

#4 | 2024-06-06
US20240181575A1
Performing operations; transporting

COPPER PASTE FOR FORMING SINTERED COPPER PILLARS AND METHOD FOR PRODUCING BONDED BODY

#5 | 2024-05-16
US20240156879A1
Human necessities

COMPOSITION AND AMELIORATING AGENT HAVING INFLAMMATION REDUCING EFFECT

#6 | 2024-05-09
US20240148799A1
Human necessities

COMPOSITION AND AMELIORATING AGENT HAVING INFLAMMATION REDUCING EFFECT

#7 | 2023-11-09
US20230356294A1
Performing operations; transporting

Copper paste, wick formation method, and heat pipe

#8 | 2022-11-24
US20220371087A1
Performing operations; transporting

COPPER PASTE FOR JOINING, METHOD FOR MANUFACTURING JOINED BODY, AND JOINED BODY

#9 | 2022-02-10
US20220044923A1
Electricity

Formation of SiN thin films

#10 | 2021-11-11
US20210351157A1
Electricity

Member connection method

#11 | 2021-06-10
US20210175052A1
Electricity

SUBSTRATE PROCESSING APPARATUS, BEVEL MASK AND SUBSTRATE PROCESSING METHOD

#12 | 2021-05-13
US20210143121A1
Electricity

Copper paste for pressureless bonding, bonded body and semiconductor device

#13 | 2020-10-29
US20200344893A1
Electricity

Method for producing joined body, and joining material

#14 | 2020-10-08
US20200321209A1
Electricity

Method for forming silicon nitride film selectively on top/bottom portions

#15 | 2020-09-17
US20200295248A1
Electricity

Method for manufacturing thermoelectric conversion module, thermoelectric conversion module, and binder for thermoelectric conversion module

#16 | 2020-09-17
US20200291511A1
Chemistry; metallurgy

Reaction chamber passivation and selective deposition of metallic films

#17 | 2020-06-04
US20200176411A1
Electricity

Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device

#18 | 2020-04-30
US20200130109A1
Performing operations; transporting

Metal paste for joints, assembly, production method for assembly, semiconductor device, and production method for semiconductor device

#19 | 2020-04-16
US20200118811A1
Electricity

Method for etching a carbon-containing feature

#20 | 2020-04-09
US20200108471A1
Performing operations; transporting

Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device

#21 | 2020-03-05
US20200075528A1
Electricity

Metal paste for joints, assembly, production method for assembly, semiconductor device, and production method for semiconductor device

#22 | 2019-12-12
US20190378711A1
Electricity

Formation of SiN thin films

#23 | 2019-11-21
US20190355690A1
Electricity

Copper paste for pressureless bonding, bonded body and semiconductor device

#24 | 2019-08-22
US20190259612A1
Electricity

Method of spacer-defined direct patterning in semiconductor fabrication

#25 | 2019-05-16
US20190148224A1
Electricity

Method of selectively depositing a capping layer structure on a semiconductor device structure

#26 | 2019-02-21
US20190057857A1
Electricity

Method for forming silicon nitride film selectively on top surface

#27 | 2019-02-21
US20190055643A1
Chemistry; metallurgy

Reaction chamber passivation and selective deposition of metallic films

#28 | 2018-11-29
US20180342478A1
Electricity

Assembly and semiconductor device

#29 | 2018-09-06
US20180250751A1
Performing operations; transporting

Copper paste for joining, method for producing joined body, and method for producing semiconductor device

#30 | 2018-03-22
US20180080121A1
Chemistry; metallurgy

Reaction chamber passivation and selective deposition of metallic films

#31 | 2017-12-14
US20170358482A1
Electricity

Selective deposition of metallic films

#32 | 2017-11-02
US20170316940A1
Electricity

Method for forming spacers using silicon nitride film for spacer-defined multiple patterning

#33 | 2017-10-31
US15177198
Electricity

Selective deposition of metallic films

#34 | 2017-10-31
US15177195
Chemistry; metallurgy

Reaction chamber passivation and selective deposition of metallic films

#35 | 2017-08-31
US20170250068A1
Electricity

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

#36 | 2017-08-24
US20170243734A1
Electricity

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

#37 | 2017-03-02
US20170062204A1
Electricity

Formation of SiN thin films

#38 | 2016-03-31
US20160093485A1
Electricity

Method for hydrophobization of surface of silicon-containing film by ALD

#39 | 2015-04-30
US20150118864A1
Electricity

Method for treating SiOCH film with hydrogen plasma

#40 | 2015-02-26
US20150056821A1
Electricity

Method for forming SiOCH film using organoaminosilane annealing

#41 | 2014-04-10
US20140096716A1
Chemistry; metallurgy

Heating/cooling pedestal for semiconductor-processing apparatus

#42 | 2014-02-13
US20140041588A1
Chemistry; metallurgy

Method for supplying gas with flow rate gradient over substrate

#43 | 2013-12-19
US20130337583A1
Electricity

Method for repairing damage of dielectric film by cyclic processes

InventorID:

577358 ⎘