Inventor profile of:

Jeeeun Yang

City:

Suwon-si

Country:

South Korea

Published Applications:

24

Last publication date:

2026-06-11

Top Assignees for applications by Jeeeun Yang

The entities that hold a legal rights for patent applications filed by inventor Yang Jeeeun:

Recent patent applications by Yang Jeeeun

Jeeeun Yang from Suwon-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-11
US20260164736A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#2 | 2026-05-21
US20260143745A1
Electricity

SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME

#3 | 2026-05-21
US20260143715A1
Electricity

FERROELECTRIC FIELD EFFECT TRANSISTOR, MEMORY DEVICE INCLUDING THE SAME, AND ELECTRONIC APPARATUS INCLUDING THE MEMORY DEVICE

#4 | 2026-04-30
US20260123009A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#5 | 2026-04-30
US20260122958A1
Electricity

SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS HAVING THE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

#6 | 2026-04-30
US20260122917A1
Electricity

MEMORY DEVICE AND DRIVING METHOD THEREOF

#7 | 2026-03-12
US20260075832A1
Electricity

ELECTROCHEMICAL MEMORY DEVICE AND DRIVING METHOD THEREOF

#8 | 2026-02-19
US20260052746A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#9 | 2026-02-19
US20260052697A1
Electricity

SEMICONDUCTOR DEVICE AND MEMORY DEVICE INCLUDING THE SAME

#10 | 2026-02-19
US20260052669A1
Electricity

SEMICONDUCTOR DEVICE

#11 | 2025-07-31
US20250248074A1
Electricity

FERROELECTRIC FIELD EFFECT TRANSISTOR, MEMORY DEVICE, AND NEURAL NETWORK DEVICE

#12 | 2025-07-24
US20250241047A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#13 | 2025-07-17
US20250234508A1
Electricity

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

#14 | 2025-07-03
US20250220997A1
Electricity

SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME

#15 | 2025-01-02
US20250006844A1
Electricity

SEMICONDUCTOR DEVICE

#16 | 2025-01-02
US20250006778A1
Electricity

CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

#17 | 2024-07-11
US20240234557A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#18 | 2024-07-04
US20240222515A1
Electricity

SEMICONDUCTOR DEVICE INCLUDING OXIDE SEMICONDUCTOR LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE

#19 | 2024-06-27
US20240215215A1
Electricity

MEMORY DEVICE INCLUDING VERTICAL CHANNEL TRANSISTOR AND ELECTRONIC DEVICE INCLUDING THE SAME

#20 | 2024-05-16
US20240162350A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#21 | 2024-04-11
US20240120421A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#22 | 2024-04-11
US20240120403A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#23 | 2024-03-07
US20240079468A1
Electricity

VERTICAL TRANSISTOR AND MANUFACTURING METHOD THEREOF

#24 | 2023-07-27
US20230238460A1
Electricity

TRANSISTOR

InventorID:

5811120 ⎘